Sequential Quenching to Predict Semiconductor Defect Concentrations from Formation & Migration Energies: The Case of CdTe:As Doping

Fuente: arXiv

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Bibliographic Details
Main Authors:	Arnab, Khandakar Aaditta, Chatratin, Intuon, Janotti, Anderson, Scarpulla, Michael
Format:	Preprint
Published:	2026
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2603.14618