Sequential Quenching to Predict Semiconductor Defect Concentrations from Formation & Migration Energies: The Case of CdTe:As Doping

Fuente: arXiv
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Bibliographic Details
Main Authors: Arnab, Khandakar Aaditta, Chatratin, Intuon, Janotti, Anderson, Scarpulla, Michael
Format: Preprint
Published: 2026
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