Synchrotron-radiation X-ray topography and reticulography of bulk $β$-Ga$_2$O$_3$ crystals grown by the cold crucible method
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arXiv
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| Natura: | Preprint |
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2026
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| _version_ | 1866914592005816320 |
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| author | Yao, Yongzhao Mizuno, Koki Ohnishi, Kazuki Ishikawa, Yukari Kitahara, Masanori Tomida, Taketoshi Murakami, Rikito Kochurikhin, Vladimir Gushchina, Liudmila Kamada, Kei Kakimoto, Koichi Yoshikawa, Akira |
| author_facet | Yao, Yongzhao Mizuno, Koki Ohnishi, Kazuki Ishikawa, Yukari Kitahara, Masanori Tomida, Taketoshi Murakami, Rikito Kochurikhin, Vladimir Gushchina, Liudmila Kamada, Kei Kakimoto, Koichi Yoshikawa, Akira |
| contents | The structural properties of a $β$-Ga$_2$O$_3$ single crystal grown by the oxide crystal growth from cold crucible (OCCC) method were investigated using synchrotron radiation X-ray topography and X-ray reticulography. The region grown beneath the seed exhibits high crystalline quality with a rocking curve full width at half maximum of about 26 arcsec. During diameter enlargement, a twist-type lattice misorientation develops between the central and laterally expanded regions, originating near the shoulder and propagating along boundaries parallel to the $\langle010\rangle$ growth direction. Dislocation analysis reveals that $\langle010\rangle$-oriented screw dislocations dominate the defect structure with densities of ~$10^{5}$cm$^{-2}$, while higher densities (~$10^{6}$cm$^{-2}$) appear in the wing region. These results clarify defect formation in OCCC-grown $β$-Ga$_2$O$_3$ and provide insights for optimizing growth conditions. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_14751 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Synchrotron-radiation X-ray topography and reticulography of bulk $β$-Ga$_2$O$_3$ crystals grown by the cold crucible method Yao, Yongzhao Mizuno, Koki Ohnishi, Kazuki Ishikawa, Yukari Kitahara, Masanori Tomida, Taketoshi Murakami, Rikito Kochurikhin, Vladimir Gushchina, Liudmila Kamada, Kei Kakimoto, Koichi Yoshikawa, Akira Materials Science The structural properties of a $β$-Ga$_2$O$_3$ single crystal grown by the oxide crystal growth from cold crucible (OCCC) method were investigated using synchrotron radiation X-ray topography and X-ray reticulography. The region grown beneath the seed exhibits high crystalline quality with a rocking curve full width at half maximum of about 26 arcsec. During diameter enlargement, a twist-type lattice misorientation develops between the central and laterally expanded regions, originating near the shoulder and propagating along boundaries parallel to the $\langle010\rangle$ growth direction. Dislocation analysis reveals that $\langle010\rangle$-oriented screw dislocations dominate the defect structure with densities of ~$10^{5}$cm$^{-2}$, while higher densities (~$10^{6}$cm$^{-2}$) appear in the wing region. These results clarify defect formation in OCCC-grown $β$-Ga$_2$O$_3$ and provide insights for optimizing growth conditions. |
| title | Synchrotron-radiation X-ray topography and reticulography of bulk $β$-Ga$_2$O$_3$ crystals grown by the cold crucible method |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.14751 |