Monolithic integration of diverse crystalline thin films on diamond for near-junction thermal management
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arXiv
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| Natura: | Preprint |
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2026
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| author | Zhao, Tiancheng Bai, Tianqi He, Yang Xu, Wenhui Yu, Xinxin Shi, Ruochen Qu, Zhenyu Liu, Jiaxin Shen, Rui Jiang, Haodong Wang, Yeliang Ding, Jiaxin Sui, Dongchen Zhang, Shibin Zhu, Lei Yi, Ailun Huang, Kai Zhou, Min Sun, Huarui Li, Zhonghui Gao, Peng You, Tiangui Ou, Xin |
| author_facet | Zhao, Tiancheng Bai, Tianqi He, Yang Xu, Wenhui Yu, Xinxin Shi, Ruochen Qu, Zhenyu Liu, Jiaxin Shen, Rui Jiang, Haodong Wang, Yeliang Ding, Jiaxin Sui, Dongchen Zhang, Shibin Zhu, Lei Yi, Ailun Huang, Kai Zhou, Min Sun, Huarui Li, Zhonghui Gao, Peng You, Tiangui Ou, Xin |
| contents | The pursuit of extreme miniaturization and high power in 6G RF front-ends has cast thermal dissipation as the central challenge. Here, we have demonstrated the monolithic integration of functionally distinct single-crystal thin films, including \b{eta}-Ga2O3, Si, GaN, and LiTaO3, onto a single diamond substrate using a multi-step transfer printing technique. Focusing on the critical \b{eta}-Ga2O3/diamond interface, we achieve an exceptional interfacial thermal conductance (ITC) of 149 MW m-2 K-1 through ultra-high vacuum (UHV) annealing, creating an atomically sharp interface featuring covalent bonding. Vibrational electron energy-loss spectroscopy (EELS) analysis combining with molecular dynamics (MD) simulations reveal that distinctive interfacial phonon modes at the \b{eta}-Ga2O3/diamond heterointerface dominate ultrahigh ITC. We experimentally demonstrate that by improving the ITC, the thermal resistance (Rth) of a diamond-based \b{eta}-Ga2O3 MOSFET is driven to a record-low value of 1.58 K mm W-1, underscoring the critical role of interface engineering in near-junction thermal management for diamond-integrated devices. This work demonstrates a scalable, diamond-based monolithic integration platform designed to solve the near-junction thermal challenges in high-power RF front-ends. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_15142 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Monolithic integration of diverse crystalline thin films on diamond for near-junction thermal management Zhao, Tiancheng Bai, Tianqi He, Yang Xu, Wenhui Yu, Xinxin Shi, Ruochen Qu, Zhenyu Liu, Jiaxin Shen, Rui Jiang, Haodong Wang, Yeliang Ding, Jiaxin Sui, Dongchen Zhang, Shibin Zhu, Lei Yi, Ailun Huang, Kai Zhou, Min Sun, Huarui Li, Zhonghui Gao, Peng You, Tiangui Ou, Xin Materials Science Applied Physics The pursuit of extreme miniaturization and high power in 6G RF front-ends has cast thermal dissipation as the central challenge. Here, we have demonstrated the monolithic integration of functionally distinct single-crystal thin films, including \b{eta}-Ga2O3, Si, GaN, and LiTaO3, onto a single diamond substrate using a multi-step transfer printing technique. Focusing on the critical \b{eta}-Ga2O3/diamond interface, we achieve an exceptional interfacial thermal conductance (ITC) of 149 MW m-2 K-1 through ultra-high vacuum (UHV) annealing, creating an atomically sharp interface featuring covalent bonding. Vibrational electron energy-loss spectroscopy (EELS) analysis combining with molecular dynamics (MD) simulations reveal that distinctive interfacial phonon modes at the \b{eta}-Ga2O3/diamond heterointerface dominate ultrahigh ITC. We experimentally demonstrate that by improving the ITC, the thermal resistance (Rth) of a diamond-based \b{eta}-Ga2O3 MOSFET is driven to a record-low value of 1.58 K mm W-1, underscoring the critical role of interface engineering in near-junction thermal management for diamond-integrated devices. This work demonstrates a scalable, diamond-based monolithic integration platform designed to solve the near-junction thermal challenges in high-power RF front-ends. |
| title | Monolithic integration of diverse crystalline thin films on diamond for near-junction thermal management |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2603.15142 |