Nanoscale electronic variations in altermagnetic $α$-MnTe

Fuente: arXiv
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Auteurs principaux: Ma, Zeyu, Wang, Yidi, Tuvia, Gal, Hauser, Kevin, Yan, Jiaqiang, Hoffman, Jennifer E.
Format: Preprint
Publié: 2026
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_version_ 1866908889312657408
author Ma, Zeyu
Wang, Yidi
Tuvia, Gal
Hauser, Kevin
Yan, Jiaqiang
Hoffman, Jennifer E.
author_facet Ma, Zeyu
Wang, Yidi
Tuvia, Gal
Hauser, Kevin
Yan, Jiaqiang
Hoffman, Jennifer E.
contents Altermagnets exhibit spin-split electronic bands like ferromagnets, yet they are magnetically compensated like collinear antiferromagnets. Altermagnets thus combine the benefits of ferromagnets and antiferromagnets, opening routes to tailored materials and applications. However, reported bulk signatures such as the anomalous Hall response in candidate altermagnets have been inconsistent across samples, suggesting that inhomogeneity may affect their functionality in electronic devices. Here, we use low-temperature scanning tunneling microscopy and spectroscopy to map the local electronic landscape of $α$-MnTe on atomically flat cleaved single crystals. We resolve two distinct electronic regions. In Region A, the chemical potential lies near the valence-band edge and varies by $\sim$100 meV on the nanometer length scale. In Region B, the chemical potential lies near the middle of a wider band gap. We further identify an incommensurate charge modulation with periodicity (2.5$\pm$0.1)$a$, observed exclusively in Region A. Our work establishes that $α$-MnTe can exhibit significant electronic non-uniformity, suggesting that nanoscale characterization is essential for its reliable use in electronic applications.
format Preprint
id arxiv_https___arxiv_org_abs_2603_15225
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Nanoscale electronic variations in altermagnetic $α$-MnTe
Ma, Zeyu
Wang, Yidi
Tuvia, Gal
Hauser, Kevin
Yan, Jiaqiang
Hoffman, Jennifer E.
Strongly Correlated Electrons
Altermagnets exhibit spin-split electronic bands like ferromagnets, yet they are magnetically compensated like collinear antiferromagnets. Altermagnets thus combine the benefits of ferromagnets and antiferromagnets, opening routes to tailored materials and applications. However, reported bulk signatures such as the anomalous Hall response in candidate altermagnets have been inconsistent across samples, suggesting that inhomogeneity may affect their functionality in electronic devices. Here, we use low-temperature scanning tunneling microscopy and spectroscopy to map the local electronic landscape of $α$-MnTe on atomically flat cleaved single crystals. We resolve two distinct electronic regions. In Region A, the chemical potential lies near the valence-band edge and varies by $\sim$100 meV on the nanometer length scale. In Region B, the chemical potential lies near the middle of a wider band gap. We further identify an incommensurate charge modulation with periodicity (2.5$\pm$0.1)$a$, observed exclusively in Region A. Our work establishes that $α$-MnTe can exhibit significant electronic non-uniformity, suggesting that nanoscale characterization is essential for its reliable use in electronic applications.
title Nanoscale electronic variations in altermagnetic $α$-MnTe
topic Strongly Correlated Electrons
url https://arxiv.org/abs/2603.15225