Anomalous and Topological Hall Effects in Antiferromagnetic EuSn2As2 Nanostructures
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| Autores principales: | , , , , , , , , , , |
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| Formato: | Preprint |
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2026
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| author | Maltsev, Evgeny I. Pérez, Nicolas Giraud, Romain Bestha, Kranthi Kumar Wolter, Anja U. B. Dufouleur, Joseph Pervakov, Kirill S. Pudalov, Vladimir M. Nielsch, Kornelius Büchner, Bernd Veyrat, Louis |
| author_facet | Maltsev, Evgeny I. Pérez, Nicolas Giraud, Romain Bestha, Kranthi Kumar Wolter, Anja U. B. Dufouleur, Joseph Pervakov, Kirill S. Pudalov, Vladimir M. Nielsch, Kornelius Büchner, Bernd Veyrat, Louis |
| contents | We investigate magnetotransport in exfoliated nanostructures of the candidate magnetic 3D topological insulator $\mathrm{EuSn_{2}As_{2}}$. Similar to macroscopic single crystals, the negative magnetoresistance observed below the Néel temperature ($T_N$ = 24 K) is related to the canted antiferromagnetic state (CAF) of an easy-plane antiferromagnet (AFM), with an increase of the saturation field when tilting the applied magnetic field away from the (ab) plane ($μ_{0} H^{c}_{s}$ = 4.9 T, $μ_{0} H^{ab}_{s}$ = 3.6 T). Higher-accuracy measurements in nanostructures up to 14 T further evidence a non-linear normal Hall response due to several electronic bands. Interestingly, the transverse resistance due to magnetism reveals an anomalous Hall effect in the CAF state, but also a topological Hall effect due to chiral spin textures, as found in AFM or helical magnets. The presence of real-space chiral spin texture, already reported in another magnetic topological insulator, $\mathrm{MnBi_{2}Te_{4}}$, could be a characteristic generally appearing in magnetic 3D topological insulators. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_15277 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Anomalous and Topological Hall Effects in Antiferromagnetic EuSn2As2 Nanostructures Maltsev, Evgeny I. Pérez, Nicolas Giraud, Romain Bestha, Kranthi Kumar Wolter, Anja U. B. Dufouleur, Joseph Pervakov, Kirill S. Pudalov, Vladimir M. Nielsch, Kornelius Büchner, Bernd Veyrat, Louis Mesoscale and Nanoscale Physics We investigate magnetotransport in exfoliated nanostructures of the candidate magnetic 3D topological insulator $\mathrm{EuSn_{2}As_{2}}$. Similar to macroscopic single crystals, the negative magnetoresistance observed below the Néel temperature ($T_N$ = 24 K) is related to the canted antiferromagnetic state (CAF) of an easy-plane antiferromagnet (AFM), with an increase of the saturation field when tilting the applied magnetic field away from the (ab) plane ($μ_{0} H^{c}_{s}$ = 4.9 T, $μ_{0} H^{ab}_{s}$ = 3.6 T). Higher-accuracy measurements in nanostructures up to 14 T further evidence a non-linear normal Hall response due to several electronic bands. Interestingly, the transverse resistance due to magnetism reveals an anomalous Hall effect in the CAF state, but also a topological Hall effect due to chiral spin textures, as found in AFM or helical magnets. The presence of real-space chiral spin texture, already reported in another magnetic topological insulator, $\mathrm{MnBi_{2}Te_{4}}$, could be a characteristic generally appearing in magnetic 3D topological insulators. |
| title | Anomalous and Topological Hall Effects in Antiferromagnetic EuSn2As2 Nanostructures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2603.15277 |