Epitaxial growth of topological insulator $β$-Ag2Te thin films
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arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866917347471654912 |
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| author | Takegawa, Ayuki Imoto, Kouya Kawamura, Minoru Tsukamoto, Moeta Yoshimi, Ryutaro |
| author_facet | Takegawa, Ayuki Imoto, Kouya Kawamura, Minoru Tsukamoto, Moeta Yoshimi, Ryutaro |
| contents | We report epitaxial growth of $β$-Ag2Te thin films by molecular beam epitaxy. $β$-Ag2Te, recently identified as a topological insulator, was grown by depositing Ag on InP substrate at room temperature followed by Te supply at elevated temperature. X-ray diffraction measurements and transmission electron microscopy analyses confirmed the (002) crystal orientation and the epitaxial atomic arrangement of $β$-Ag2Te thin films. Electrical transport measurements revealed that the $β$-Ag2Te thin film exhibits two-dimensional metallic conduction while the bulk remains insulating. The epitaxial $β$-Ag2Te thin films obtained here provide a viable platform for investigating emergent phenomena arising from surface Dirac states and for designing heterojunction-based device structures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_15406 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Epitaxial growth of topological insulator $β$-Ag2Te thin films Takegawa, Ayuki Imoto, Kouya Kawamura, Minoru Tsukamoto, Moeta Yoshimi, Ryutaro Materials Science We report epitaxial growth of $β$-Ag2Te thin films by molecular beam epitaxy. $β$-Ag2Te, recently identified as a topological insulator, was grown by depositing Ag on InP substrate at room temperature followed by Te supply at elevated temperature. X-ray diffraction measurements and transmission electron microscopy analyses confirmed the (002) crystal orientation and the epitaxial atomic arrangement of $β$-Ag2Te thin films. Electrical transport measurements revealed that the $β$-Ag2Te thin film exhibits two-dimensional metallic conduction while the bulk remains insulating. The epitaxial $β$-Ag2Te thin films obtained here provide a viable platform for investigating emergent phenomena arising from surface Dirac states and for designing heterojunction-based device structures. |
| title | Epitaxial growth of topological insulator $β$-Ag2Te thin films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.15406 |