Flat-Band Generation in InAs/GaSb Quantum Wells through Vertically Engineered Heterostructures
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arXiv
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| Format: | Preprint |
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2026
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| author | Enderson, Zachery A. Fang, Jiyuan Wang, Wei-Chen Xiang, Li Ozerov, Mykhaylo Smirnov, Dmitry Jiang, Zhigang Hawkins, Samuel D. Muhowski, Aaron J. Klem, John F. Pan, Wei |
| author_facet | Enderson, Zachery A. Fang, Jiyuan Wang, Wei-Chen Xiang, Li Ozerov, Mykhaylo Smirnov, Dmitry Jiang, Zhigang Hawkins, Samuel D. Muhowski, Aaron J. Klem, John F. Pan, Wei |
| contents | Quantum materials constitute a novel category of substances wherein quantum effects and electron-electron (e-e) interactions give rise to unforeseen phenomena on a macroscopic scale. Of particular interest within the realm of quantum materials are flat bands, which promote heavy conduction electrons and enhance e-e correlation effects. While the engineering of such flat bands has been demonstrated in graphene and two-dimensional transition metal dichalcogenides moiré superlattices and in lithography defined semiconductor moiré superlattices, conventional tear-and-stack fabrication methods face challenges due to inevitable twist-angle disorder, strain, and relaxation effects, leading to issues with reproducibility and scalability. Here, we explore the creation and modification of flat bands through vertically engineered III-V semiconductor heterostructures, without the need for twisting. These artificial quantum materials offer a reproducible and scalable means for producing high-quality flat-band materials via molecular beam epitaxy growth. Our investigation includes magnetotransport and infrared magneto-spectroscopy studies of quad-layer InAs/GaSb quantum wells, accompanied by k*p band structure calculations, which illustrate the flattening of bands in vertically designed heterostructures. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_15593 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Flat-Band Generation in InAs/GaSb Quantum Wells through Vertically Engineered Heterostructures Enderson, Zachery A. Fang, Jiyuan Wang, Wei-Chen Xiang, Li Ozerov, Mykhaylo Smirnov, Dmitry Jiang, Zhigang Hawkins, Samuel D. Muhowski, Aaron J. Klem, John F. Pan, Wei Mesoscale and Nanoscale Physics Quantum materials constitute a novel category of substances wherein quantum effects and electron-electron (e-e) interactions give rise to unforeseen phenomena on a macroscopic scale. Of particular interest within the realm of quantum materials are flat bands, which promote heavy conduction electrons and enhance e-e correlation effects. While the engineering of such flat bands has been demonstrated in graphene and two-dimensional transition metal dichalcogenides moiré superlattices and in lithography defined semiconductor moiré superlattices, conventional tear-and-stack fabrication methods face challenges due to inevitable twist-angle disorder, strain, and relaxation effects, leading to issues with reproducibility and scalability. Here, we explore the creation and modification of flat bands through vertically engineered III-V semiconductor heterostructures, without the need for twisting. These artificial quantum materials offer a reproducible and scalable means for producing high-quality flat-band materials via molecular beam epitaxy growth. Our investigation includes magnetotransport and infrared magneto-spectroscopy studies of quad-layer InAs/GaSb quantum wells, accompanied by k*p band structure calculations, which illustrate the flattening of bands in vertically designed heterostructures. |
| title | Flat-Band Generation in InAs/GaSb Quantum Wells through Vertically Engineered Heterostructures |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2603.15593 |