3D tomography of exchange phase in a Si/SiGe quantum dot device

Fuente: arXiv
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Autori principali: Albrecht, Dylan, Thompson, Sarah, Jacobson, N. Tobias, Jock, Ryan
Natura: Preprint
Pubblicazione: 2026
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author Albrecht, Dylan
Thompson, Sarah
Jacobson, N. Tobias
Jock, Ryan
author_facet Albrecht, Dylan
Thompson, Sarah
Jacobson, N. Tobias
Jock, Ryan
contents The exchange interaction is a foundational building block for the operation of spin-based quantum processors. Extracting the exchange interaction coefficient $J(\mathbf{V})$, as a function of gate electrode voltages, is important for understanding disorder, faithfully simulating device performance, and operating spin qubits with high fidelity. Typical coherent measurements of exchange in spin qubit devices yield a modulated cosine of an accumulated phase, which in turn is the time integral of exchange. As such, extracting $J(\mathbf{V})$ from experimental data is difficult due to the ambiguity of inverting a cosine, the sensitivity to noise when unwrapping phase, as well as the problem of inverting the integral. As a step toward obtaining $J(\mathbf{V})$, we tackle the first two challenges to reveal the accumulated phase, $ϕ(\mathbf{V})$. We incorporate techniques from a wide range of fields to robustly extract and model a 3D phase volume for spin qubit devices from a sequence of 2D measurements. In particular, we present a measurement technique to obtain the wrapped phase, as done in phase-shifting digital holography, and utilize the max-flow/min-cut phase unwrapping method (PUMA) to unwrap the phase in 3D voltage space. We show this method is robust to the minimal observed drift in the device, which we confirm by increasing scan resolution. Upon building a model of the extracted phase, we optimize over the model to locate a minimal-gradient $π$ exchange pulse point in voltage space. Our measurement protocol may provide detailed information useful for understanding the origins of device variability governing device yield, enable calibrating device models to specific devices during operation for more sophisticated error attribution, and enable a systematic optimization of qubit control. We anticipate that the methods presented here may be applicable to other qubit platforms.
format Preprint
id arxiv_https___arxiv_org_abs_2603_16025
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle 3D tomography of exchange phase in a Si/SiGe quantum dot device
Albrecht, Dylan
Thompson, Sarah
Jacobson, N. Tobias
Jock, Ryan
Mesoscale and Nanoscale Physics
Computer Vision and Pattern Recognition
Quantum Physics
The exchange interaction is a foundational building block for the operation of spin-based quantum processors. Extracting the exchange interaction coefficient $J(\mathbf{V})$, as a function of gate electrode voltages, is important for understanding disorder, faithfully simulating device performance, and operating spin qubits with high fidelity. Typical coherent measurements of exchange in spin qubit devices yield a modulated cosine of an accumulated phase, which in turn is the time integral of exchange. As such, extracting $J(\mathbf{V})$ from experimental data is difficult due to the ambiguity of inverting a cosine, the sensitivity to noise when unwrapping phase, as well as the problem of inverting the integral. As a step toward obtaining $J(\mathbf{V})$, we tackle the first two challenges to reveal the accumulated phase, $ϕ(\mathbf{V})$. We incorporate techniques from a wide range of fields to robustly extract and model a 3D phase volume for spin qubit devices from a sequence of 2D measurements. In particular, we present a measurement technique to obtain the wrapped phase, as done in phase-shifting digital holography, and utilize the max-flow/min-cut phase unwrapping method (PUMA) to unwrap the phase in 3D voltage space. We show this method is robust to the minimal observed drift in the device, which we confirm by increasing scan resolution. Upon building a model of the extracted phase, we optimize over the model to locate a minimal-gradient $π$ exchange pulse point in voltage space. Our measurement protocol may provide detailed information useful for understanding the origins of device variability governing device yield, enable calibrating device models to specific devices during operation for more sophisticated error attribution, and enable a systematic optimization of qubit control. We anticipate that the methods presented here may be applicable to other qubit platforms.
title 3D tomography of exchange phase in a Si/SiGe quantum dot device
topic Mesoscale and Nanoscale Physics
Computer Vision and Pattern Recognition
Quantum Physics
url https://arxiv.org/abs/2603.16025