High-Bandwidth 940 nm VCSEL with Zn-diffusion for Optical Communications
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arXiv
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| Autores principales: | , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866908893150445568 |
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| author | Hsiao, Fu-He Lin, Yu-Jie Tsai, Chia-Jung Li, Chia-Chen Chang, Yun-Han Chang, Chih-Ting He, Jr-Hau Lin, Chun-Liang Hong, Yu-Heng Kuo, Hao-Chung |
| author_facet | Hsiao, Fu-He Lin, Yu-Jie Tsai, Chia-Jung Li, Chia-Chen Chang, Yun-Han Chang, Chih-Ting He, Jr-Hau Lin, Chun-Liang Hong, Yu-Heng Kuo, Hao-Chung |
| contents | We present a systematic design methodology, combining simulation and experimental validation, for high-speed 940 nm vertical-cavity surface-emitting lasers (VCSELs). A comprehensive simulation study was conducted to optimize the device structure, focusing on the number of oxide layers and the aperture size, which predicted a maximum modulation bandwidth of over 35 GHz. To validate this approach, an optimized device with a 4-μm double-oxide aperture was fabricated and characterized. Crucially, during the fabrication process, a Zn-diffused region was incorporated to further enhance device performance. The experimental results demonstrate a modulation bandwidth of 34 GHz and successful 100 Gbit/s PAM-4 data transmission. The excellent agreement between the simulated and measured performance validates the effectiveness of our design meth-odology, providing a reliable framework for developing next-generation optical inter-connects. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_16144 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | High-Bandwidth 940 nm VCSEL with Zn-diffusion for Optical Communications Hsiao, Fu-He Lin, Yu-Jie Tsai, Chia-Jung Li, Chia-Chen Chang, Yun-Han Chang, Chih-Ting He, Jr-Hau Lin, Chun-Liang Hong, Yu-Heng Kuo, Hao-Chung Optics We present a systematic design methodology, combining simulation and experimental validation, for high-speed 940 nm vertical-cavity surface-emitting lasers (VCSELs). A comprehensive simulation study was conducted to optimize the device structure, focusing on the number of oxide layers and the aperture size, which predicted a maximum modulation bandwidth of over 35 GHz. To validate this approach, an optimized device with a 4-μm double-oxide aperture was fabricated and characterized. Crucially, during the fabrication process, a Zn-diffused region was incorporated to further enhance device performance. The experimental results demonstrate a modulation bandwidth of 34 GHz and successful 100 Gbit/s PAM-4 data transmission. The excellent agreement between the simulated and measured performance validates the effectiveness of our design meth-odology, providing a reliable framework for developing next-generation optical inter-connects. |
| title | High-Bandwidth 940 nm VCSEL with Zn-diffusion for Optical Communications |
| topic | Optics |
| url | https://arxiv.org/abs/2603.16144 |