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Bibliographic Details
Main Authors: Hsiao, Fu-He, Lin, Yu-Jie, Tsai, Chia-Jung, Li, Chia-Chen, Chang, Yun-Han, Chang, Chih-Ting, He, Jr-Hau, Lin, Chun-Liang, Hong, Yu-Heng, Kuo, Hao-Chung
Format: Preprint
Published: 2026
Subjects:
Online Access:https://arxiv.org/abs/2603.16144
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Table of Contents:
  • We present a systematic design methodology, combining simulation and experimental validation, for high-speed 940 nm vertical-cavity surface-emitting lasers (VCSELs). A comprehensive simulation study was conducted to optimize the device structure, focusing on the number of oxide layers and the aperture size, which predicted a maximum modulation bandwidth of over 35 GHz. To validate this approach, an optimized device with a 4-μm double-oxide aperture was fabricated and characterized. Crucially, during the fabrication process, a Zn-diffused region was incorporated to further enhance device performance. The experimental results demonstrate a modulation bandwidth of 34 GHz and successful 100 Gbit/s PAM-4 data transmission. The excellent agreement between the simulated and measured performance validates the effectiveness of our design meth-odology, providing a reliable framework for developing next-generation optical inter-connects.