Lasing from a Quantum-Dot-Like Buried Heterostructure in an InP Nanobeam Cavity

Fuente: arXiv
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Main Authors: Bille-Lauridsen, Valdemar, Jarbøl, Rasmus, Xiong, Meng, Sakanas, Aurimas, Semenova, Elizaveta, Yvind, Kresten, Mørk, Jesper
Format: Preprint
Published: 2026
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_version_ 1866917350196903936
author Bille-Lauridsen, Valdemar
Jarbøl, Rasmus
Xiong, Meng
Sakanas, Aurimas
Semenova, Elizaveta
Yvind, Kresten
Mørk, Jesper
author_facet Bille-Lauridsen, Valdemar
Jarbøl, Rasmus
Xiong, Meng
Sakanas, Aurimas
Semenova, Elizaveta
Yvind, Kresten
Mørk, Jesper
contents We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This represents the smallest laterally confined buried heterostructure gain region from which lasing has been observed. Despite etching of the active region during cavity definition and the associated risk of surface-related nonradiative recombination, optically pumped devices exhibit a clear lasing threshold and a narrow linewidth. By systematically varying the BH size, we investigate how the lasing threshold depends on the active volume under optical pumping. The estimated intrinsic threshold under ideal carrier injection is 57 nW, comparable to values reported for single quantum-dot nanolasers, highlighting the potential of quantum-dot-scale buried heterostructures as deterministic, scalable gain media for nanophotonic lasers.
format Preprint
id arxiv_https___arxiv_org_abs_2603_16636
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Lasing from a Quantum-Dot-Like Buried Heterostructure in an InP Nanobeam Cavity
Bille-Lauridsen, Valdemar
Jarbøl, Rasmus
Xiong, Meng
Sakanas, Aurimas
Semenova, Elizaveta
Yvind, Kresten
Mørk, Jesper
Optics
We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This represents the smallest laterally confined buried heterostructure gain region from which lasing has been observed. Despite etching of the active region during cavity definition and the associated risk of surface-related nonradiative recombination, optically pumped devices exhibit a clear lasing threshold and a narrow linewidth. By systematically varying the BH size, we investigate how the lasing threshold depends on the active volume under optical pumping. The estimated intrinsic threshold under ideal carrier injection is 57 nW, comparable to values reported for single quantum-dot nanolasers, highlighting the potential of quantum-dot-scale buried heterostructures as deterministic, scalable gain media for nanophotonic lasers.
title Lasing from a Quantum-Dot-Like Buried Heterostructure in an InP Nanobeam Cavity
topic Optics
url https://arxiv.org/abs/2603.16636