Investigating Ultra-Low Energy Ionization Yield from Nuclear Recoils in Semiconductor Detectors via Molecular Dynamics Simulations
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arXiv
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| Format: | Preprint |
| Published: |
2026
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| _version_ | 1866915870006050816 |
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| author | Fang, Chang-Hao |
| author_facet | Fang, Chang-Hao |
| contents | Nuclear recoil ionization yield constitutes a critical uncertainty source in low-energy detection for dark matter (DM) and coherent elastic neutrino-nucleus scattering (CE$ν$NS) experiments. We present a novel methodology employing molecular dynamics simulations to assess ionization yields in crystalline semiconductor detectors. This non-parameterized approach resolving inherent limitations of traditional Lindhard model through explicit incorporation of crystal condensed matter effects, facilitating a seamless reliability from high-energy ($E>10$\,keV) to electron-hole pair (EHP) regimes. Our model achieves the best agreement with experimental data in silicon to date, especially at the minimal energy level of a single EHP. Meticulously consideration of ion transport mechanisms reveals fundamental ionization yield distributions, superseding conventional single-value models. The distributional paradigm extends the DM-nucleon elastic scattering exclusion limit to 0.29\,GeV/$c^2$ under single-EHP sensitivity. We further report advancements in modeling quantum effects and channeling phenomena affecting ionization yields in high-purity germanium detectors. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_16702 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Investigating Ultra-Low Energy Ionization Yield from Nuclear Recoils in Semiconductor Detectors via Molecular Dynamics Simulations Fang, Chang-Hao Instrumentation and Detectors High Energy Physics - Experiment Nuclear recoil ionization yield constitutes a critical uncertainty source in low-energy detection for dark matter (DM) and coherent elastic neutrino-nucleus scattering (CE$ν$NS) experiments. We present a novel methodology employing molecular dynamics simulations to assess ionization yields in crystalline semiconductor detectors. This non-parameterized approach resolving inherent limitations of traditional Lindhard model through explicit incorporation of crystal condensed matter effects, facilitating a seamless reliability from high-energy ($E>10$\,keV) to electron-hole pair (EHP) regimes. Our model achieves the best agreement with experimental data in silicon to date, especially at the minimal energy level of a single EHP. Meticulously consideration of ion transport mechanisms reveals fundamental ionization yield distributions, superseding conventional single-value models. The distributional paradigm extends the DM-nucleon elastic scattering exclusion limit to 0.29\,GeV/$c^2$ under single-EHP sensitivity. We further report advancements in modeling quantum effects and channeling phenomena affecting ionization yields in high-purity germanium detectors. |
| title | Investigating Ultra-Low Energy Ionization Yield from Nuclear Recoils in Semiconductor Detectors via Molecular Dynamics Simulations |
| topic | Instrumentation and Detectors High Energy Physics - Experiment |
| url | https://arxiv.org/abs/2603.16702 |