Cover Image

Giant intrinsic dichroism in \b{eta}-Ga2O3 enables filter-free, high-fidelity polarization division multiplexing

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Zhang, Yonghui, Zhu, Rui, Liang, Huili, Zhao, Guochao, Wei, Shuli, Lu, Qing, Mei, Zengxia
Format:	Preprint
Published:	2026
Subjects:	Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
by: Liu, Yizheng, et al.
Published: (2025)

Design and simulation of GaSe hybrid photonic waveguides on a \b{eta}-Ga2O3 platform
by: Islam, Md. Nakibul, et al.
Published: (2025)

Wavelength-division multiplexing optical Ising simulator enabling fully programmable spin couplings and external magnetic fields
by: Luo, Li, et al.
Published: (2023)

On-chip, inverse-designed active wavelength division multiplexer at THz frequencies
by: Digiorgio, Valerio, et al.
Published: (2024)

Acoustic helical dichroism enhanced by chiral quasi-bound states in the continuum
by: Tong, Qing, et al.
Published: (2025)

In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium
by: Das, Nabasindhu, et al.
Published: (2024)

Realization of Insulating Buffer Layers via MOCVD-Grown Nitrogen-Doped (010) \b{eta}-Ga2O3
by: Kahler, Rachel, et al.
Published: (2025)

Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension
by: Gilankar, Advait, et al.
Published: (2025)

Orientation-Dependent \b{eta}-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO
by: Liu, Yizheng, et al.
Published: (2025)

2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width
by: Saha, Chinmoy Nath, et al.
Published: (2025)

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
by: Liu, Yizheng, et al.
Published: (2024)

On-chip wavelength division multiplexing by angled multimode interferometer fabricated on erbium-doped thin film lithium niobate on insulator
by: Han, Jinli, et al.
Published: (2024)

Scalable intensity-based photonic matrix-vector multiplication processor using single-wavelength time-division-multiplexed signals
by: Chai, Chengli, et al.
Published: (2025)

Electron beam irradiation-induced transport and recombination in p-type Gallium Oxide grown on (001) \b{eta}-Ga2O3 substrate
by: Marciaga, Gabriel, et al.
Published: (2025)

Scintillation response of Ga2O3 excited by laser accelerated ultra-high dose rate proton beam
by: Liang, Yulan, et al.
Published: (2025)

Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
by: Liu, Yizheng, et al.
Published: (2025)

Cryogenic photonic link using an extended-InGaAs photodiode and short pulse illumination towards high-fidelity drive of superconducting qubits
by: Nakamura, Takuma, et al.
Published: (2024)

Copper-impurity-free photonic integrated circuits enable deterministic soliton microcombs
by: Ji, Xinru, et al.
Published: (2025)

Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
by: Dill, Joseph E., et al.
Published: (2024)

Non-Hermitian fluctuations enable model-free particle manipulation
by: Zavatski, Siarhei, et al.
Published: (2026)

Sub-milliwatt threshold power and tunable-bias all-optical nonlinear activation function using vanadium dioxide for wavelength-division multiplexing photonic neural networks
by: Parra, Jorge, et al.
Published: (2024)

Ferroelectric AlScN thin films with enhanced polarization and low leakage enabled by high-power impulse magnetron sputtering
by: Messi, Federica, et al.
Published: (2025)

Amorphous Ga 2 O 3 Semiconductor: A New Solution for Robust X‐Ray Dosimeters
by: Hang Shao, et al.
Published: (2025)

Atomic-scale order enables high thermal boundary conductance at $β$-Ga$_2$O$_3$/4H-SiC interfaces
by: Yang, Hongao, et al.
Published: (2026)

Generation of polarization-entangled Bell states in monolithic photonic waveguides by leveraging intrinsic crystal properties
by: Vrckovnik, Trevor G., et al.
Published: (2025)

$γ$-phase Inclusions as Common Defects in Alloyed $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $β$-Ga$_2$O$_3$ Films
by: Chang, Celesta S., et al.
Published: (2020)

Solid-state batteries enabled by ultra-high-frequency self-heating
by: Zhang, Buyi, et al.
Published: (2024)

Crack-free high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT on sapphire with record low sheet resistance
by: Mukhopadhyay, Swarnav, et al.
Published: (2023)

Mg-doping and free-hole properties of hot-wall MOCVD GaN
by: Papamichail, Alexis, et al.
Published: (2022)

Highly polarized single photon emitter from intrinsic localized excitons in a WSe2/CrSBr heterostructure
by: Alapatt, Varghese, et al.
Published: (2024)

Achieving high-performance polarization-independent nonreciprocal thermal radiation with pattern-free heterostructures
by: Do, Bach, et al.
Published: (2025)

Linear dichroism of the optical properties of SnS and SnSe van der Waals crystals
by: Tołłoczko, Agata K., et al.
Published: (2024)

Above-room-temperature intrinsic ferromagnetism in ultrathin van der Waals crystal Fe$_{3+x}$GaTe$_2$
by: Zhang, Gaojie, et al.
Published: (2024)

Metasurface-enabled non-orthogonal four-output polarization splitter for non-redundant full-Stokes imaging
by: Soma, Go, et al.
Published: (2024)

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
by: Matys, Maciej, et al.
Published: (2024)

Epitaxial high-K AlBN barrier GaN HEMTs
by: Savant, Chandrashekhar, et al.
Published: (2025)

Shubnikov-de Haas oscillations in coherently strained AlN/GaN/AlN quantum wells on bulk AlN substrates
by: Chen, Yu-Hsin, et al.
Published: (2025)

Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
by: Chen, Yu-Hsin, et al.
Published: (2026)

Molecularly imprinted nanopores for multiplexed sensing, release, and in-edge computing
by: Douaki, Ali, et al.
Published: (2025)

Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric
by: Casamento, Joseph, et al.
Published: (2021)