Stability of Charge Collection Efficiency and Time Resolution in 4H-SiC PIN Diodes Under X-ray Irradiation
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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866911529075474432 |
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| author | Zhou, Jiaqi Zhao, Sen Zhang, Xiyuan Xiao, Suyu Fu, Chenxi Wang, Congcong Li, Yanpeng Song, Weimin Shi, Xin |
| author_facet | Zhou, Jiaqi Zhao, Sen Zhang, Xiyuan Xiao, Suyu Fu, Chenxi Wang, Congcong Li, Yanpeng Song, Weimin Shi, Xin |
| contents | This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates. Comprehensive pre- and post-irradiation characterization includes I-V/C-V measurements, charge collection efficiency (CCE) and timing resolution tests using $β$-particles ($^{90}$Sr). After \SI{2}{MGy} irradiation, the reverse leakage current remains at an ultralow level of $\sim 10^{-11}$ \si{A/cm^2} at \SI{-300}{V} with negligible degradation. C-V characteristics are basically consistent, with full depletion at \SI{~130}{V}. CCE for $β$-particles decreases by less than 5\%. The detector maintains good timing resolution: \SI{21}{ps} before and \SI{31}{ps} after irradiation, with jitter increasing moderately. These results demonstrate stable performance under extreme X-ray exposure, highlighting the detector's potential for radiation-hard applications in high-energy physics, space missions, and nuclear reactor monitoring. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_18547 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Stability of Charge Collection Efficiency and Time Resolution in 4H-SiC PIN Diodes Under X-ray Irradiation Zhou, Jiaqi Zhao, Sen Zhang, Xiyuan Xiao, Suyu Fu, Chenxi Wang, Congcong Li, Yanpeng Song, Weimin Shi, Xin Instrumentation and Detectors This study evaluates the radiation tolerance of a 4H-SiC PIN detector under X-ray irradiation up to \SI{2}{MGy} (Si) at \SI{160}{keV}. The detector features a fully epitaxial vertical PIN structure with mesa terminations and field plates. Comprehensive pre- and post-irradiation characterization includes I-V/C-V measurements, charge collection efficiency (CCE) and timing resolution tests using $β$-particles ($^{90}$Sr). After \SI{2}{MGy} irradiation, the reverse leakage current remains at an ultralow level of $\sim 10^{-11}$ \si{A/cm^2} at \SI{-300}{V} with negligible degradation. C-V characteristics are basically consistent, with full depletion at \SI{~130}{V}. CCE for $β$-particles decreases by less than 5\%. The detector maintains good timing resolution: \SI{21}{ps} before and \SI{31}{ps} after irradiation, with jitter increasing moderately. These results demonstrate stable performance under extreme X-ray exposure, highlighting the detector's potential for radiation-hard applications in high-energy physics, space missions, and nuclear reactor monitoring. |
| title | Stability of Charge Collection Efficiency and Time Resolution in 4H-SiC PIN Diodes Under X-ray Irradiation |
| topic | Instrumentation and Detectors |
| url | https://arxiv.org/abs/2603.18547 |