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Auteurs principaux: Dick, Daniel, Fuchs, Florian, Gemming, Sibylle, Schuster, Jörg
Format: Preprint
Publié: 2026
Sujets:
Accès en ligne:https://arxiv.org/abs/2603.18747
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author Dick, Daniel
Fuchs, Florian
Gemming, Sibylle
Schuster, Jörg
author_facet Dick, Daniel
Fuchs, Florian
Gemming, Sibylle
Schuster, Jörg
contents Local composition fluctuations in random alloys become crucial when one or more dimensions are reduced to the nanoscale. Using extended Hückel theory, we study the semiconductor random alloy SiGe sandwiched between Si due to its relevance for transistor devices. We evaluate the effects of the alloy composition, layer thickness, and local fluctuations of the Ge concentration on the band alignment and the band gap. The results are compared with the finite quantum well model. That model captures the essential physics and can act as a computationally faster alternative.
format Preprint
id arxiv_https___arxiv_org_abs_2603_18747
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Quantum confinement in semiconductor random alloys: a case study on Si/SiGe/Si
Dick, Daniel
Fuchs, Florian
Gemming, Sibylle
Schuster, Jörg
Mesoscale and Nanoscale Physics
Local composition fluctuations in random alloys become crucial when one or more dimensions are reduced to the nanoscale. Using extended Hückel theory, we study the semiconductor random alloy SiGe sandwiched between Si due to its relevance for transistor devices. We evaluate the effects of the alloy composition, layer thickness, and local fluctuations of the Ge concentration on the band alignment and the band gap. The results are compared with the finite quantum well model. That model captures the essential physics and can act as a computationally faster alternative.
title Quantum confinement in semiconductor random alloys: a case study on Si/SiGe/Si
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2603.18747