Salvato in:
Dettagli Bibliografici
Autori principali: Chatterjee, Subhashree, Basnet, Rabindra, Nepal, Rajeev, Budhani, Ramesh C.
Natura: Preprint
Pubblicazione: 2026
Soggetti:
Accesso online:https://arxiv.org/abs/2603.19148
Tags: Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
_version_ 1866917353608970240
author Chatterjee, Subhashree
Basnet, Rabindra
Nepal, Rajeev
Budhani, Ramesh C.
author_facet Chatterjee, Subhashree
Basnet, Rabindra
Nepal, Rajeev
Budhani, Ramesh C.
contents Understanding how optical excitation couples with polarization and interfacial electrostatics in van der Waals (vdW) ferroelectrics (FEs) is essential for the development of light-programmable nanoelectronic and optoelectronic devices. Here, we present direct nanoscale evidence of photoferroionic coupling in the vdW FE semiconductor CuInP2S6 (CIPS), where optical excitation jointly modulates electronic band bending, FE switching, and Cu+ ionic relaxation. The use of correlated Kelvin probe force microscopy, piezoresponse force microscopy, and conductive atomic force microscopy under above-bandgap illumination reveals illumination-induced enhancement of surface work function, persistent surface photovoltage, reduced coercive field, and positive imprint shifts. These effects arise from synergistic photocarrier redistribution and slow Cu+ migration that reshape interfacial depletion widths and internal electric fields. Illumination-assisted barrier lowering further enhances carrier injection and produces sweep-rate-dependent ferroionic transport hysteresis. Our results establish photoferroionic coupling as the governing mechanism for light-controlled band modulation and polarization stability in CIPS, providing a nanoscale framework for designing light-addressable FE memories, optoelectronic switches, and neuromorphic devices based on layered ferroionic materials.
format Preprint
id arxiv_https___arxiv_org_abs_2603_19148
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Photoferroelectric Coupling and Polarization-Controlled Interfacial Band Modulation in van der Waal Compound CuInP2S6
Chatterjee, Subhashree
Basnet, Rabindra
Nepal, Rajeev
Budhani, Ramesh C.
Materials Science
Understanding how optical excitation couples with polarization and interfacial electrostatics in van der Waals (vdW) ferroelectrics (FEs) is essential for the development of light-programmable nanoelectronic and optoelectronic devices. Here, we present direct nanoscale evidence of photoferroionic coupling in the vdW FE semiconductor CuInP2S6 (CIPS), where optical excitation jointly modulates electronic band bending, FE switching, and Cu+ ionic relaxation. The use of correlated Kelvin probe force microscopy, piezoresponse force microscopy, and conductive atomic force microscopy under above-bandgap illumination reveals illumination-induced enhancement of surface work function, persistent surface photovoltage, reduced coercive field, and positive imprint shifts. These effects arise from synergistic photocarrier redistribution and slow Cu+ migration that reshape interfacial depletion widths and internal electric fields. Illumination-assisted barrier lowering further enhances carrier injection and produces sweep-rate-dependent ferroionic transport hysteresis. Our results establish photoferroionic coupling as the governing mechanism for light-controlled band modulation and polarization stability in CIPS, providing a nanoscale framework for designing light-addressable FE memories, optoelectronic switches, and neuromorphic devices based on layered ferroionic materials.
title Photoferroelectric Coupling and Polarization-Controlled Interfacial Band Modulation in van der Waal Compound CuInP2S6
topic Materials Science
url https://arxiv.org/abs/2603.19148