Single-Crystal AlN Wafer-Based Bulk Acoustic Resonators for Piezoelectric Power Conversion
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2026
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| author | Yao, Ziqian Daniel, Clarissa Pan, Kaicheng Hsu, Tzu-Hsuan Chang, Heather Goorsky, Mark S Rivas-Davila, Juan Lu, Ruochen |
| author_facet | Yao, Ziqian Daniel, Clarissa Pan, Kaicheng Hsu, Tzu-Hsuan Chang, Heather Goorsky, Mark S Rivas-Davila, Juan Lu, Ruochen |
| contents | In this work, we demonstrate the first single-crystal aluminum nitride (AlN) wafer-based thickness-extensional (TE) mode bulk acoustic resonator for piezoelectric power conversion. The device exhibits a high series resonance 3-dB quality factor ($Q$) of 1677 and an electromechanical coupling coefficient ($k^2$) of 6.1%, highlighting the strong potential of AlN resonators for efficient power conversion. To suppress in-band spurious modes, a grounded ring structure is proposed and experimentally validated. The measured frequency-domain impedance response shows a spurious suppression of the spectrum above the resonance at 13.52 MHz. A comparative analysis with prior PZT, LN, and LT-based resonators indicates that AlN achieves a competitive figure of merit and $f \cdot Q$ product, while its material thermal conductivity is orders of magnitude higher than that of the incumbent piezoelectric power-converter resonators. The power-handling capability is expected to be superior in AlN single-crystal wafers and will be demonstrated in ongoing experiments. These results suggest that AlN offers a promising platform for compact, robust piezoelectric power converters and next-generation power electronic systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_19409 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Single-Crystal AlN Wafer-Based Bulk Acoustic Resonators for Piezoelectric Power Conversion Yao, Ziqian Daniel, Clarissa Pan, Kaicheng Hsu, Tzu-Hsuan Chang, Heather Goorsky, Mark S Rivas-Davila, Juan Lu, Ruochen Applied Physics In this work, we demonstrate the first single-crystal aluminum nitride (AlN) wafer-based thickness-extensional (TE) mode bulk acoustic resonator for piezoelectric power conversion. The device exhibits a high series resonance 3-dB quality factor ($Q$) of 1677 and an electromechanical coupling coefficient ($k^2$) of 6.1%, highlighting the strong potential of AlN resonators for efficient power conversion. To suppress in-band spurious modes, a grounded ring structure is proposed and experimentally validated. The measured frequency-domain impedance response shows a spurious suppression of the spectrum above the resonance at 13.52 MHz. A comparative analysis with prior PZT, LN, and LT-based resonators indicates that AlN achieves a competitive figure of merit and $f \cdot Q$ product, while its material thermal conductivity is orders of magnitude higher than that of the incumbent piezoelectric power-converter resonators. The power-handling capability is expected to be superior in AlN single-crystal wafers and will be demonstrated in ongoing experiments. These results suggest that AlN offers a promising platform for compact, robust piezoelectric power converters and next-generation power electronic systems. |
| title | Single-Crystal AlN Wafer-Based Bulk Acoustic Resonators for Piezoelectric Power Conversion |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2603.19409 |