Quantum transfer in high-root topological insulators

Fuente: arXiv
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Main Authors: Moreira, G. F., Lykholat, A., Dias, R. G., Marques, A. M.
Format: Preprint
Published: 2026
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author Moreira, G. F.
Lykholat, A.
Dias, R. G.
Marques, A. M.
author_facet Moreira, G. F.
Lykholat, A.
Dias, R. G.
Marques, A. M.
contents This paper focuses on the quantum state transfer in a one-dimensional (1D) high-root topological insulator (HRTI) with an arbitrary number of domains. We present the possibility of having multiple transfer processes in the same model due to the existence of various edge states in distinct energy gaps, which may benefit recent (de)multiplexing technologies. We also derived the relations between transfer times of different root models and different gaps in the same model. We show how the exponential decay in transfer time caused by the fragmentation of a parent chain into domains can be generalized to its higher-root versions while maintaining a high transfer fidelity, and how the increasing number of domain wall states leads to a higher transfer fidelity against a general disorder regime due to the topological protection inherited from the parent model.
format Preprint
id arxiv_https___arxiv_org_abs_2603_19513
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Quantum transfer in high-root topological insulators
Moreira, G. F.
Lykholat, A.
Dias, R. G.
Marques, A. M.
Mesoscale and Nanoscale Physics
This paper focuses on the quantum state transfer in a one-dimensional (1D) high-root topological insulator (HRTI) with an arbitrary number of domains. We present the possibility of having multiple transfer processes in the same model due to the existence of various edge states in distinct energy gaps, which may benefit recent (de)multiplexing technologies. We also derived the relations between transfer times of different root models and different gaps in the same model. We show how the exponential decay in transfer time caused by the fragmentation of a parent chain into domains can be generalized to its higher-root versions while maintaining a high transfer fidelity, and how the increasing number of domain wall states leads to a higher transfer fidelity against a general disorder regime due to the topological protection inherited from the parent model.
title Quantum transfer in high-root topological insulators
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2603.19513