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| Format: | Preprint |
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2026
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| Online-Zugang: | https://arxiv.org/abs/2603.19619 |
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| _version_ | 1866914410230972416 |
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| author | Xie, Weifeng Wang, Libo Xu, Xiong Yue, Yunliang Xia, Huayan He, Longhui Wang, Hui |
| author_facet | Xie, Weifeng Wang, Libo Xu, Xiong Yue, Yunliang Xia, Huayan He, Longhui Wang, Hui |
| contents | Stable and remarkable valley polarization effect is the key to utilizing valley degree of freedom in valleytronic devices. According to first-principles calculations and symmetry analysis, we reveal that valley polarization effect in monolayer V2Se2O altermagnet is correlated with the net magnetic moment between magnetic V atoms under uniaxial strain, thereby proposing two strategies for achieving giant valley polarization effect. Firstly, substituting one V atom in V2Se2O with Cr to construct a ferrimagnetic monolayer VCrSe2O enhances the net magnetic moment between magnetic atoms, thereby realizing a giant valley polarization effect. Applying uniaxial strain along either the a-axis or b-axis significantly increases the value of valley polarization, which exhibits a nearly linear relationship with the net magnetic moments between the magnetic atoms. Secondly, constructing a van der Waals heterostructure composed of V2Se2O and α-SnO monolayers breaks mirror symmetry, thereby inducing a net magnetic moment, which in turn causes a remarkable valley polarization effect. Compressing the interlayer distance of the heterostructure can increase the net magnetic moment between V atoms, then enhancing the value of valley polarization to nearly 400 meV. This work reveals that valley polarization in monolayer altermagnet is correlated with the net magnetic moment between magnetic atoms. Finally, we propose two strategies to achieve giant valley polarization based on monolayer altermagnets, providing theoretical guidance for the potential applications of ferrimagnetic monolayers and altermagnet-based heterostructures in valleytronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_19619 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Realizing giant valley polarization effect based on monolayer altermagnets Xie, Weifeng Wang, Libo Xu, Xiong Yue, Yunliang Xia, Huayan He, Longhui Wang, Hui Materials Science Stable and remarkable valley polarization effect is the key to utilizing valley degree of freedom in valleytronic devices. According to first-principles calculations and symmetry analysis, we reveal that valley polarization effect in monolayer V2Se2O altermagnet is correlated with the net magnetic moment between magnetic V atoms under uniaxial strain, thereby proposing two strategies for achieving giant valley polarization effect. Firstly, substituting one V atom in V2Se2O with Cr to construct a ferrimagnetic monolayer VCrSe2O enhances the net magnetic moment between magnetic atoms, thereby realizing a giant valley polarization effect. Applying uniaxial strain along either the a-axis or b-axis significantly increases the value of valley polarization, which exhibits a nearly linear relationship with the net magnetic moments between the magnetic atoms. Secondly, constructing a van der Waals heterostructure composed of V2Se2O and α-SnO monolayers breaks mirror symmetry, thereby inducing a net magnetic moment, which in turn causes a remarkable valley polarization effect. Compressing the interlayer distance of the heterostructure can increase the net magnetic moment between V atoms, then enhancing the value of valley polarization to nearly 400 meV. This work reveals that valley polarization in monolayer altermagnet is correlated with the net magnetic moment between magnetic atoms. Finally, we propose two strategies to achieve giant valley polarization based on monolayer altermagnets, providing theoretical guidance for the potential applications of ferrimagnetic monolayers and altermagnet-based heterostructures in valleytronics. |
| title | Realizing giant valley polarization effect based on monolayer altermagnets |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.19619 |