Cvitkovich, L., Stano, P., Bougeard, D., Niquet, Y., & Loss, D. (2026). Increasing valley splitting in Si/SiGe by practically achievable heterostructure profiles.
Style de citation Chicago (17e éd.)Cvitkovich, Lukas, Peter Stano, Dominique Bougeard, Yann-Michel Niquet, et Daniel Loss. Increasing Valley Splitting in Si/SiGe by Practically Achievable Heterostructure Profiles. 2026.
Style de citation MLA (9e éd.)Cvitkovich, Lukas, et al. Increasing Valley Splitting in Si/SiGe by Practically Achievable Heterostructure Profiles. 2026.
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