Chern Insulator in magnetic-doped two-dimensional semiconductors

Fuente: arXiv
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Autor principal: Duong, Dinh Loc
Formato: Preprint
Publicado: 2026
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_version_ 1866908905442902016
author Duong, Dinh Loc
author_facet Duong, Dinh Loc
contents We propose an approach to induce nontrivial bands with non-zero Chern numbers by utilizing strong spin-orbit coupling in transition metal dichalcogenides with dopants. We demonstrate that a doped state near the valence-band edge induces band inversion with the hybridized host band, leading to topologically non-trivial properties. Calculations for V-doped WSe2 and WS2 confirm this mechanism. The coexistence of magnetic order and nontrivial topology in these systems offers a promising platform for exploring the quantum anomalous Hall effect.
format Preprint
id arxiv_https___arxiv_org_abs_2603_20875
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Chern Insulator in magnetic-doped two-dimensional semiconductors
Duong, Dinh Loc
Mesoscale and Nanoscale Physics
Materials Science
We propose an approach to induce nontrivial bands with non-zero Chern numbers by utilizing strong spin-orbit coupling in transition metal dichalcogenides with dopants. We demonstrate that a doped state near the valence-band edge induces band inversion with the hybridized host band, leading to topologically non-trivial properties. Calculations for V-doped WSe2 and WS2 confirm this mechanism. The coexistence of magnetic order and nontrivial topology in these systems offers a promising platform for exploring the quantum anomalous Hall effect.
title Chern Insulator in magnetic-doped two-dimensional semiconductors
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2603.20875