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Main Authors: Nathwani, Lucy S., Ruperto, Anne, Vallipuram, Ashvini, Jiang, Abigail Y., Pan, Grace A., Segedin, Dan Ferenc, Turkiewicz, Ari B., Brooks, Charles M., Mason, Jarad A., Song, Qichen, Mundy, Julia A.
Format: Preprint
Published: 2026
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Online Access:https://arxiv.org/abs/2603.21405
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author Nathwani, Lucy S.
Ruperto, Anne
Vallipuram, Ashvini
Jiang, Abigail Y.
Pan, Grace A.
Segedin, Dan Ferenc
Turkiewicz, Ari B.
Brooks, Charles M.
Mason, Jarad A.
Song, Qichen
Mundy, Julia A.
author_facet Nathwani, Lucy S.
Ruperto, Anne
Vallipuram, Ashvini
Jiang, Abigail Y.
Pan, Grace A.
Segedin, Dan Ferenc
Turkiewicz, Ari B.
Brooks, Charles M.
Mason, Jarad A.
Song, Qichen
Mundy, Julia A.
contents Perovskite oxides display correlated electrical, magnetic, and thermal properties that can be further tuned in the thin-film limit, making them contenders for next-generation electronics. Measuring thermal transport in thin films is challenging, because traditional techniques are dominated by the substrate. Here, frequency-domain thermoreflectance (FDTR) of an epitaxial NdNiO$_3$ thin film reveals a sharp change in out-of-plane thermal conductivity across the metal-insulator transition. Complementary frequency-domain photoreflectance (FDPR) reveals a large change in ambipolar diffusivity of photoexcited carriers. While the in-plane electrical resistance shows large hysteresis, out-of-plane thermal and charge transport shows negligible hysteresis. We attribute this discrepancy to anisotropy in the percolation of nanoscale domains across the transition as the film thickness approaches the domain length scale. We establish FDTR and FDPR as sensitive probes of quantum material phase transitions and highlight NdNiO$_3$ for thermal control and memory applications.
format Preprint
id arxiv_https___arxiv_org_abs_2603_21405
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Observation of microscopic domain effects in the metal-insulator transition of thin-film NdNiO$_3$
Nathwani, Lucy S.
Ruperto, Anne
Vallipuram, Ashvini
Jiang, Abigail Y.
Pan, Grace A.
Segedin, Dan Ferenc
Turkiewicz, Ari B.
Brooks, Charles M.
Mason, Jarad A.
Song, Qichen
Mundy, Julia A.
Mesoscale and Nanoscale Physics
Perovskite oxides display correlated electrical, magnetic, and thermal properties that can be further tuned in the thin-film limit, making them contenders for next-generation electronics. Measuring thermal transport in thin films is challenging, because traditional techniques are dominated by the substrate. Here, frequency-domain thermoreflectance (FDTR) of an epitaxial NdNiO$_3$ thin film reveals a sharp change in out-of-plane thermal conductivity across the metal-insulator transition. Complementary frequency-domain photoreflectance (FDPR) reveals a large change in ambipolar diffusivity of photoexcited carriers. While the in-plane electrical resistance shows large hysteresis, out-of-plane thermal and charge transport shows negligible hysteresis. We attribute this discrepancy to anisotropy in the percolation of nanoscale domains across the transition as the film thickness approaches the domain length scale. We establish FDTR and FDPR as sensitive probes of quantum material phase transitions and highlight NdNiO$_3$ for thermal control and memory applications.
title Observation of microscopic domain effects in the metal-insulator transition of thin-film NdNiO$_3$
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2603.21405