Antiferromagnetic Pure Spin Current Memdevices
Fuente:
arXiv
Enregistré dans:
| Auteurs principaux: | , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2026
|
| Sujets: | |
| Accès en ligne: | |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866908906809196544 |
|---|---|
| author | Latorre, Martin De la Barrera, Gaspar Troncoso, Roberto E. Nunez, Alvaro S. |
| author_facet | Latorre, Martin De la Barrera, Gaspar Troncoso, Roberto E. Nunez, Alvaro S. |
| contents | Spin currents can be generated through various mechanisms, including the piezospintronic effect, which arises when strain or lattice distortions induce a change in the dipolar spin moment, causing a pure spin current without necessarily being accompanied by net charge transport. This opens new possibilities for low-power information processing and novel device architectures. In this work, we propose a novel effect, the spintronic-magneto-impedictive effect, as the theoretical basis for a pure spin-current memory-like device based on antiferromagnetic components. We focus on materials that can be modeled by the so-called spin-Rice-Mele Hamiltonian, incorporating a magnetic field gradient that explicitly breaks inversion symmetry. Our results shed light on how spin currents are generated and controlled, providing new insights into the potential of these materials for next-generation spintronic technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_21755 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Antiferromagnetic Pure Spin Current Memdevices Latorre, Martin De la Barrera, Gaspar Troncoso, Roberto E. Nunez, Alvaro S. Mesoscale and Nanoscale Physics Materials Science Other Condensed Matter Spin currents can be generated through various mechanisms, including the piezospintronic effect, which arises when strain or lattice distortions induce a change in the dipolar spin moment, causing a pure spin current without necessarily being accompanied by net charge transport. This opens new possibilities for low-power information processing and novel device architectures. In this work, we propose a novel effect, the spintronic-magneto-impedictive effect, as the theoretical basis for a pure spin-current memory-like device based on antiferromagnetic components. We focus on materials that can be modeled by the so-called spin-Rice-Mele Hamiltonian, incorporating a magnetic field gradient that explicitly breaks inversion symmetry. Our results shed light on how spin currents are generated and controlled, providing new insights into the potential of these materials for next-generation spintronic technologies. |
| title | Antiferromagnetic Pure Spin Current Memdevices |
| topic | Mesoscale and Nanoscale Physics Materials Science Other Condensed Matter |
| url | https://arxiv.org/abs/2603.21755 |