Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , , , |
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| Format: | Preprint |
| Veröffentlicht: |
2026
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| Schlagworte: | |
| Online-Zugang: | https://arxiv.org/abs/2603.21814 |
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Inhaltsangabe:
- The ultrawide-bandgap semiconductor $β$-Ga2O3 holds exceptional promise for next-generation power electronics and deep-ultraviolet optoelectronics, yet its widespread application is hindered by the lack of cost-effective, high-quality heteroepitaxial thin films. Here, we demonstrate an interpretable machine learning framework that efficiently navigates the complex, multiparameter process space of pulsed laser deposition (PLD) to achieve high-crystallinity $β$-Ga2O3 epitaxy on c-plane sapphire. By systematically benchmarking nine regression algorithms under limited experimental data conditions, we identify quadratic polynomial ridge regression as the optimal surrogate model, which combines predictive accuracy (R$^2$ $\approx$ 0.86) with full physical transparency through explicit analytical coefficients. Coupling this model with SHAP (SHapley Additive exPlanations) analysis and iterative experimental design, we construct a closed-loop optimization workflow that progressively refines the process-performance landscape over only three experimental rounds. This data-efficient strategy reduces the X-ray rocking curve (RC) full-width at half-maximum (FWHM) by 70$\%$ from > 3$^{\circ}$ to 0.92$^{\circ}$, which is the best reported value for PLD-grown $β$-Ga2O3 on sapphire. Intriguingly, concurrent modeling of surface roughness reveals that crystalline quality and surface morphology are governed by distinct dominant factors: temperature primarily controls bulk crystallinity, whereas oxygen pressure dictates surface kinetics. This decoupled mechanism, quantitatively captured for the first time via feature importance analysis, provides actionable physical insight for independent optimization of structural and morphological properties. Our work establishes a generalizable, resource-efficient paradigm for intelligent process development in oxide epitaxy and beyond.