Benchmarking Dual-Polarization Silicon Nitride Photonic Integrated Circuits for Trapped-Ion Quantum Technologies
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arXiv
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| Autori principali: | , , , , , , , , , , , , |
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| Natura: | Preprint |
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2026
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| author | Grimpe, Carl-Frederik Lüßmann-Sorokina, Anastasiia Du, Guochun Sah, Pragya Sauer, Steffen Jordan, Elena Thomas, Rijil Gehrmann, Pascal Lipkin, Maksim Suckow, Stephan Lemme, Max C. Kroker, Stefanie Mehlstäubler, Tanja E. |
| author_facet | Grimpe, Carl-Frederik Lüßmann-Sorokina, Anastasiia Du, Guochun Sah, Pragya Sauer, Steffen Jordan, Elena Thomas, Rijil Gehrmann, Pascal Lipkin, Maksim Suckow, Stephan Lemme, Max C. Kroker, Stefanie Mehlstäubler, Tanja E. |
| contents | Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize silicon nitride (Si\(_3\)N\(_4\)) PIC components, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760\,nm, which is a typical wavelength for Yb$^{+}$-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_22578 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Benchmarking Dual-Polarization Silicon Nitride Photonic Integrated Circuits for Trapped-Ion Quantum Technologies Grimpe, Carl-Frederik Lüßmann-Sorokina, Anastasiia Du, Guochun Sah, Pragya Sauer, Steffen Jordan, Elena Thomas, Rijil Gehrmann, Pascal Lipkin, Maksim Suckow, Stephan Lemme, Max C. Kroker, Stefanie Mehlstäubler, Tanja E. Optics Trapped ions are one of the most advanced platforms for quantum technologies, with applications ranging from quantum computing to precision timekeeping. A crucial step towards more compact and scalable systems involves integrating photonic integrated circuits (PICs) into surface ion traps to enable on-chip light delivery and optical addressing of individual ions. Currently, most implementations rely solely on transverse-electric (TE) mode grating couplers, where the emitted light is polarized in the plane of the chip. In this work, we design, fabricate and characterize silicon nitride (Si\(_3\)N\(_4\)) PIC components, including incoupling structures, splitters, and grating couplers that support both TE and transverse-magnetic (TM) modes with comparable optical losses. We benchmark the PIC at 760\,nm, which is a typical wavelength for Yb$^{+}$-applications. The fabricated grating couplers enable the outcoupling of collimated free-space beams for both polarizations, exhibiting distinct emission angles. This dual-polarization capability gives more flexibility in polarization control and expands the accessible optical design space for trapped-ion quantum technologies. |
| title | Benchmarking Dual-Polarization Silicon Nitride Photonic Integrated Circuits for Trapped-Ion Quantum Technologies |
| topic | Optics |
| url | https://arxiv.org/abs/2603.22578 |