Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga$_2$O$_3$ thin films
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| Autores principales: | , , , , , , , , |
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| Formato: | Preprint |
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2026
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| _version_ | 1866917359568027648 |
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| author | Freitas, Inês Sousa, Ana Sofia Esteves, Duarte Magalhães Sall, Mamour da Costa, Ângelo Rafael Granadeiro Madureira, Joana Verde, Sandra Cabo Lorenz, Katharina Peres, Marco |
| author_facet | Freitas, Inês Sousa, Ana Sofia Esteves, Duarte Magalhães Sall, Mamour da Costa, Ângelo Rafael Granadeiro Madureira, Joana Verde, Sandra Cabo Lorenz, Katharina Peres, Marco |
| contents | Gallium oxide (Ga$_2$O$_3$) is a wide-bandgap semiconductor with exceptional electrical and optical properties, making it a promising material for optoelectronic and sensing applications. In this work, we demonstrate for the first time the formation of plasmonic silver (Ag) and gold (Au) nanoparticles embedded in Ga$_2$O$_3$ thin films via ion implantation. Ga$_2$O$_3$ films deposited by RF sputtering on sapphire substrates were implanted with Ag or Au ions at 150 keV and a nominal fluence of 5 $\times$ 10$^{16}$ ions/cm$^2$, followed by thermal annealing between 200 and 700 °C. Rutherford backscattering spectrometry (RBS) measurements revealed saturation effects during implantation, resulting in lower incorporated fluences, as well as out-diffusion with post-implantation annealing. Transmission electron microscopy confirmed the formation of metallic nanoparticles with a distribution consistent with the metal profiles measured by RBS. Optical absorption measurements showed a pronounced localized surface plasmon resonance (LSPR) band in the Ag-implanted films, visible even in the as-implanted state and red-shifting with increasing annealing temperature, while Au-implanted films exhibited a distinct LSPR peak only after annealing at $\geq$500 °C. The observed LSPR shifts with annealing are attributed primarily to changes in the Ga$_2$O$_3$ matrix rather than a change in nanoparticle size. These results establish ion implantation as a viable approach for integrating plasmonic nanostructures into Ga$_2$O$_3$. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2603_23110 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga$_2$O$_3$ thin films Freitas, Inês Sousa, Ana Sofia Esteves, Duarte Magalhães Sall, Mamour da Costa, Ângelo Rafael Granadeiro Madureira, Joana Verde, Sandra Cabo Lorenz, Katharina Peres, Marco Materials Science Mesoscale and Nanoscale Physics Gallium oxide (Ga$_2$O$_3$) is a wide-bandgap semiconductor with exceptional electrical and optical properties, making it a promising material for optoelectronic and sensing applications. In this work, we demonstrate for the first time the formation of plasmonic silver (Ag) and gold (Au) nanoparticles embedded in Ga$_2$O$_3$ thin films via ion implantation. Ga$_2$O$_3$ films deposited by RF sputtering on sapphire substrates were implanted with Ag or Au ions at 150 keV and a nominal fluence of 5 $\times$ 10$^{16}$ ions/cm$^2$, followed by thermal annealing between 200 and 700 °C. Rutherford backscattering spectrometry (RBS) measurements revealed saturation effects during implantation, resulting in lower incorporated fluences, as well as out-diffusion with post-implantation annealing. Transmission electron microscopy confirmed the formation of metallic nanoparticles with a distribution consistent with the metal profiles measured by RBS. Optical absorption measurements showed a pronounced localized surface plasmon resonance (LSPR) band in the Ag-implanted films, visible even in the as-implanted state and red-shifting with increasing annealing temperature, while Au-implanted films exhibited a distinct LSPR peak only after annealing at $\geq$500 °C. The observed LSPR shifts with annealing are attributed primarily to changes in the Ga$_2$O$_3$ matrix rather than a change in nanoparticle size. These results establish ion implantation as a viable approach for integrating plasmonic nanostructures into Ga$_2$O$_3$. |
| title | Formation of Ag and Au Plasmonic Nanoparticles by Ion Implantation in Ga$_2$O$_3$ thin films |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2603.23110 |