Quantum Saturation of the Electro-Optic Effect

Fuente: arXiv
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Autores principales: Ross, Aiden, Hazra, Sankalpa, Suceava, Albert, Sotir, Dylan, Schlom, Darrell G., Gopalan, Venkatraman, Chen, Long-Qing
Formato: Preprint
Publicado: 2026
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author Ross, Aiden
Hazra, Sankalpa
Suceava, Albert
Sotir, Dylan
Schlom, Darrell G.
Gopalan, Venkatraman
Chen, Long-Qing
author_facet Ross, Aiden
Hazra, Sankalpa
Suceava, Albert
Sotir, Dylan
Schlom, Darrell G.
Gopalan, Venkatraman
Chen, Long-Qing
contents Future quantum computing architectures require electro-optic materials that maintain a strong, stable performance at cryogenic temperatures. In conventional electro-optic materials, large electro-optic coefficients are often confined to narrow temperature windows near structural phase transitions, where small changes in temperature lead to large changes in the electro-optic response. Using thermodynamic analysis, phase-field simulations, experimental growth and cryogenic optical measurements we show that quantum fluctuations can be harnessed to overcome this trade-off. By tuning the ferroelectric phase boundaries down to 0 K, quantum fluctuations induce a saturation regime in which a large electro-optic response becomes nearly temperature-independent below 25 K. We demonstrate that the phase boundaries can be tuned through either strain in BaTiO3 or through chemical composition in Ba1-xCaxTiO3, leading to a large, temperature insensitive, cryogenic electro-optic effect comparable to bulk BaTiO3 at room temperature; the performance exceeds BaTiO3-on-Si by over an order of magnitude. These findings establish a general design principle for engineering high-performance electro-optic materials for cryogenic applications.
format Preprint
id arxiv_https___arxiv_org_abs_2603_23486
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Quantum Saturation of the Electro-Optic Effect
Ross, Aiden
Hazra, Sankalpa
Suceava, Albert
Sotir, Dylan
Schlom, Darrell G.
Gopalan, Venkatraman
Chen, Long-Qing
Materials Science
Future quantum computing architectures require electro-optic materials that maintain a strong, stable performance at cryogenic temperatures. In conventional electro-optic materials, large electro-optic coefficients are often confined to narrow temperature windows near structural phase transitions, where small changes in temperature lead to large changes in the electro-optic response. Using thermodynamic analysis, phase-field simulations, experimental growth and cryogenic optical measurements we show that quantum fluctuations can be harnessed to overcome this trade-off. By tuning the ferroelectric phase boundaries down to 0 K, quantum fluctuations induce a saturation regime in which a large electro-optic response becomes nearly temperature-independent below 25 K. We demonstrate that the phase boundaries can be tuned through either strain in BaTiO3 or through chemical composition in Ba1-xCaxTiO3, leading to a large, temperature insensitive, cryogenic electro-optic effect comparable to bulk BaTiO3 at room temperature; the performance exceeds BaTiO3-on-Si by over an order of magnitude. These findings establish a general design principle for engineering high-performance electro-optic materials for cryogenic applications.
title Quantum Saturation of the Electro-Optic Effect
topic Materials Science
url https://arxiv.org/abs/2603.23486