Laser-induced creation of coherent V2 centers in bulk-grown silicon carbide
Fuente:
arXiv
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Veröffentlicht: |
2026
|
| Schlagworte: | |
| Online-Zugang: | |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| _version_ | 1866917410131410944 |
|---|---|
| author | Feije, L. J. Timmer, G. M. Hu, Y. Karababa, R. van de Stolpe, G. L. Martens, T. Loenen, S. J. H. Durant, T. B. A. Das, A. Day, A. M. Hu, E. L. Taminiau, T. H. |
| author_facet | Feije, L. J. Timmer, G. M. Hu, Y. Karababa, R. van de Stolpe, G. L. Martens, T. Loenen, S. J. H. Durant, T. B. A. Das, A. Day, A. M. Hu, E. L. Taminiau, T. H. |
| contents | Solid-state spin defects are promising qubits for quantum network nodes. A key challenge towards larger networks is creating defects with high yield into nanophotonic devices, while maintaining good optical and spin properties. Here, we demonstrate the creation of V2 centers in nanopillars fabricated from commercial bulk-grown 4H-silicon carbide using a pulsed above-bandgap (UV) laser. We observe an eleven-fold increase in the V2 center occurrence after UV laser illumination. These laser-induced V2 centers exhibit narrow optical linewidths and spectral diffusion rates comparable to naturally occurring V2 centers in nanopillars of the same material. Furthermore, we measure a spin coherence time of $T_{2}^{\mathrm{DD}} = 3.6 \pm 0.3~\text{ms}$ under dynamical decoupling, consistent with dephasing by the nuclear-spin bath. This demonstration of the in-situ, post-fabrication generation of coherent V2 centers in nanostructures in widely available bulk-grown 4H-SiC, shows the potential for above-bandgap laser illumination for scalable defect creation in integrated photonic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_23603 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Laser-induced creation of coherent V2 centers in bulk-grown silicon carbide Feije, L. J. Timmer, G. M. Hu, Y. Karababa, R. van de Stolpe, G. L. Martens, T. Loenen, S. J. H. Durant, T. B. A. Das, A. Day, A. M. Hu, E. L. Taminiau, T. H. Quantum Physics Solid-state spin defects are promising qubits for quantum network nodes. A key challenge towards larger networks is creating defects with high yield into nanophotonic devices, while maintaining good optical and spin properties. Here, we demonstrate the creation of V2 centers in nanopillars fabricated from commercial bulk-grown 4H-silicon carbide using a pulsed above-bandgap (UV) laser. We observe an eleven-fold increase in the V2 center occurrence after UV laser illumination. These laser-induced V2 centers exhibit narrow optical linewidths and spectral diffusion rates comparable to naturally occurring V2 centers in nanopillars of the same material. Furthermore, we measure a spin coherence time of $T_{2}^{\mathrm{DD}} = 3.6 \pm 0.3~\text{ms}$ under dynamical decoupling, consistent with dephasing by the nuclear-spin bath. This demonstration of the in-situ, post-fabrication generation of coherent V2 centers in nanostructures in widely available bulk-grown 4H-SiC, shows the potential for above-bandgap laser illumination for scalable defect creation in integrated photonic devices. |
| title | Laser-induced creation of coherent V2 centers in bulk-grown silicon carbide |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2603.23603 |