Layer-Selective Proximity Symmetry Breaking Enables Anomalous and Nonlinear Hall Responses in 1H-TMD Metals
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arXiv
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| Autores principales: | , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866917376690225152 |
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| author | Wicaksono, Yusuf Kariyado, Toshikaze |
| author_facet | Wicaksono, Yusuf Kariyado, Toshikaze |
| contents | Nonlinear Hall responses are a direct electrical probe of quantum geometry, but they are symmetry-forbidden in many pristine two-dimensional metals. We show that layer-selective magnetic proximity unlocks intrinsic linear and nonlinear Hall effects in metallic $1H-NbX_2$ ($X=\mathrm{S,Se,Te}$), where native $D_{3h}$ symmetry forces both the anomalous Hall conductivity and the Berry-curvature dipole (BCD) to vanish. Fully relativistic density-functional theory combined with Wannier interpolation reveals that an out-of-plane proximity exchange that preserves $C_3$ generates a sizable sheet anomalous Hall conductivity, $σ^{\mathrm{sheet}}_{xy} \sim 10^{-2}(e^2/h)$, while keeping the BCD exactly zero. Breaking $C_3$ by adding an in-plane exchange component (or an orthogonal two-sided exchange texture) produces a strongly tunable BCD and hence a nonlinear Hall conductivity that is odd and approximately linear in the in-plane exchange scale, reaching $|D_y|$ of order $10^{-2}$ angstrom and maximized in NbTe$_2$. These magnitudes imply a readily measurable second-harmonic Hall voltage in micron-scale Hall bars under mA ac drive. We further propose a dual-interface device in which the signs of the first- and second-harmonic Hall voltages provide two-bit readout using the same contacts. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_24019 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Layer-Selective Proximity Symmetry Breaking Enables Anomalous and Nonlinear Hall Responses in 1H-TMD Metals Wicaksono, Yusuf Kariyado, Toshikaze Mesoscale and Nanoscale Physics Nonlinear Hall responses are a direct electrical probe of quantum geometry, but they are symmetry-forbidden in many pristine two-dimensional metals. We show that layer-selective magnetic proximity unlocks intrinsic linear and nonlinear Hall effects in metallic $1H-NbX_2$ ($X=\mathrm{S,Se,Te}$), where native $D_{3h}$ symmetry forces both the anomalous Hall conductivity and the Berry-curvature dipole (BCD) to vanish. Fully relativistic density-functional theory combined with Wannier interpolation reveals that an out-of-plane proximity exchange that preserves $C_3$ generates a sizable sheet anomalous Hall conductivity, $σ^{\mathrm{sheet}}_{xy} \sim 10^{-2}(e^2/h)$, while keeping the BCD exactly zero. Breaking $C_3$ by adding an in-plane exchange component (or an orthogonal two-sided exchange texture) produces a strongly tunable BCD and hence a nonlinear Hall conductivity that is odd and approximately linear in the in-plane exchange scale, reaching $|D_y|$ of order $10^{-2}$ angstrom and maximized in NbTe$_2$. These magnitudes imply a readily measurable second-harmonic Hall voltage in micron-scale Hall bars under mA ac drive. We further propose a dual-interface device in which the signs of the first- and second-harmonic Hall voltages provide two-bit readout using the same contacts. |
| title | Layer-Selective Proximity Symmetry Breaking Enables Anomalous and Nonlinear Hall Responses in 1H-TMD Metals |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2603.24019 |