Topological insulator single-electron transistors for charge sensing applications
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arXiv
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866914420983070720 |
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| author | Atanov, Omargeldi Feng, Junya Brede, Jens Breunig, Oliver Ando, Yoichi |
| author_facet | Atanov, Omargeldi Feng, Junya Brede, Jens Breunig, Oliver Ando, Yoichi |
| contents | We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds in the charge-stability diagrams of our devices confirming the charge quantization and single-electron transport. In some devices, the Coulomb resonances show persistent shifts corresponding up to $\sim$ e/2 charge. An axial magnetic field further displaces these shifts to higher or lower gate voltages. We find that the axial magnetic-field dependence of the shifts is consistent with the Zeeman shift of a trap state coupled to the SET, and we reproduce the observations using numerical simulations. The resonance shifts are therefore identified as a consequence of the sensitivity of our TI-SET devices to charges in proximity. Establishing this charge sensing capability is a first step toward integrating TI-SETs as charge sensors in more complex TI-based hybrid devices, with the overarching goal of detecting and braiding Majorana zero modes. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2603_24220 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Topological insulator single-electron transistors for charge sensing applications Atanov, Omargeldi Feng, Junya Brede, Jens Breunig, Oliver Ando, Yoichi Mesoscale and Nanoscale Physics Materials Science We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds in the charge-stability diagrams of our devices confirming the charge quantization and single-electron transport. In some devices, the Coulomb resonances show persistent shifts corresponding up to $\sim$ e/2 charge. An axial magnetic field further displaces these shifts to higher or lower gate voltages. We find that the axial magnetic-field dependence of the shifts is consistent with the Zeeman shift of a trap state coupled to the SET, and we reproduce the observations using numerical simulations. The resonance shifts are therefore identified as a consequence of the sensitivity of our TI-SET devices to charges in proximity. Establishing this charge sensing capability is a first step toward integrating TI-SETs as charge sensors in more complex TI-based hybrid devices, with the overarching goal of detecting and braiding Majorana zero modes. |
| title | Topological insulator single-electron transistors for charge sensing applications |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2603.24220 |