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| Main Authors: | , , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2603.24565 |
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| _version_ | 1866915891143245824 |
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| author | Itzhak, Noya Ruth Reidy, Kate Levy-Greenberg, Maya Miller, Paul Anthony Wei, Chen Quispe, Juan Gomez Tromer, Raphael Hellman, Olle Joselevich, Shahar Ashman, Aliza Houben, Lothar Kaplan-Ashiri, Ifat Sui, Xiao-Meng Brontvein, Olga Rechav, Katya Travers, Laurent Autreto, Pedro A. S. Galvão, Douglas S. Panciera, Federico Hod, Oded Kronik, Leeor Ross, Frances M. Joselevich, Ernesto |
| author_facet | Itzhak, Noya Ruth Reidy, Kate Levy-Greenberg, Maya Miller, Paul Anthony Wei, Chen Quispe, Juan Gomez Tromer, Raphael Hellman, Olle Joselevich, Shahar Ashman, Aliza Houben, Lothar Kaplan-Ashiri, Ifat Sui, Xiao-Meng Brontvein, Olga Rechav, Katya Travers, Laurent Autreto, Pedro A. S. Galvão, Douglas S. Panciera, Federico Hod, Oded Kronik, Leeor Ross, Frances M. Joselevich, Ernesto |
| contents | Chiral crystals exhibit useful handedness-dependent properties, including spin selectivity and circularly polarized light sensitivity, yet controlling which enantiomer forms during synthesis remains a central challenge. Existing approaches utilize molecules in solution to template crystal growth, which restricts processing conditions and introduces organic contaminants incompatible with device fabrication. Enantioselective growth of a chiral crystal on a chiral surface via vapor-phase synthesis (chiral epitaxy) has not yet been demonstrated. Here, we show chiral epitaxy of aligned tellurium nanowires on a low-symmetry two-dimensional material, ReSe2. In situ electron microscopies suggest a mechanism where handedness is determined at nucleation by the interface energy difference between Te enantiomers and the chiral substrate surface. Chiral epitaxy provides a solvent-free, vapor-solid route to homochiral crystals compatible with semiconductor and quantum manufacturing processes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_24565 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Chiral Epitaxy: Enantioselective Growth of Chiral Nanowires on Low-Symmetry Two-Dimensional Materials Itzhak, Noya Ruth Reidy, Kate Levy-Greenberg, Maya Miller, Paul Anthony Wei, Chen Quispe, Juan Gomez Tromer, Raphael Hellman, Olle Joselevich, Shahar Ashman, Aliza Houben, Lothar Kaplan-Ashiri, Ifat Sui, Xiao-Meng Brontvein, Olga Rechav, Katya Travers, Laurent Autreto, Pedro A. S. Galvão, Douglas S. Panciera, Federico Hod, Oded Kronik, Leeor Ross, Frances M. Joselevich, Ernesto Materials Science Chiral crystals exhibit useful handedness-dependent properties, including spin selectivity and circularly polarized light sensitivity, yet controlling which enantiomer forms during synthesis remains a central challenge. Existing approaches utilize molecules in solution to template crystal growth, which restricts processing conditions and introduces organic contaminants incompatible with device fabrication. Enantioselective growth of a chiral crystal on a chiral surface via vapor-phase synthesis (chiral epitaxy) has not yet been demonstrated. Here, we show chiral epitaxy of aligned tellurium nanowires on a low-symmetry two-dimensional material, ReSe2. In situ electron microscopies suggest a mechanism where handedness is determined at nucleation by the interface energy difference between Te enantiomers and the chiral substrate surface. Chiral epitaxy provides a solvent-free, vapor-solid route to homochiral crystals compatible with semiconductor and quantum manufacturing processes. |
| title | Chiral Epitaxy: Enantioselective Growth of Chiral Nanowires on Low-Symmetry Two-Dimensional Materials |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.24565 |