Chalcogen Doping Effect on the Insulator-to-Metal Transition in GdPS
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| Main Authors: | , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866910073534545920 |
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| author | Acharya, Gokul Basnet, Rabindra Chhetri, Santosh Karki Upreti, Dinesh Sharma, M. M. Wang, Jian Graf, David Hu, Jin |
| author_facet | Acharya, Gokul Basnet, Rabindra Chhetri, Santosh Karki Upreti, Dinesh Sharma, M. M. Wang, Jian Graf, David Hu, Jin |
| contents | Topological semimetals offer a rich platform for exploring massless fermion physics and realizing exotic properties with potential technological applications. GdPS, a magnetic semiconductor derived from the nodal-line semimetal ZrSiS family, exhibits a field-induced insulator-to-metal transition driven by exchange splitting. This transition is accompanied by an unusual, isotropic, and gigantic negative magnetoresistance, attributed to negligible magnetic anisotropy resulting from the weak spin-orbit coupling of half-filled Gd3+ 4f orbitals and light S atoms. In this work, we investigate Se substitution, which is expected to enhance spin-orbit coupling. Indeed, we observe slightly increased magnetic anisotropy in magnetotransport. Moreover, Se substitution suppresses the field-induced insulator-to-metal transition, likely due to an enlarged band gap that demands a higher exchange splitting to close. These findings provide deeper insights into the interplay between spin-orbit coupling, magnetic anisotropy, and transport behavior in GdPS, offering guidance for future materials design for desired functionalities. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2603_24762 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Chalcogen Doping Effect on the Insulator-to-Metal Transition in GdPS Acharya, Gokul Basnet, Rabindra Chhetri, Santosh Karki Upreti, Dinesh Sharma, M. M. Wang, Jian Graf, David Hu, Jin Materials Science Topological semimetals offer a rich platform for exploring massless fermion physics and realizing exotic properties with potential technological applications. GdPS, a magnetic semiconductor derived from the nodal-line semimetal ZrSiS family, exhibits a field-induced insulator-to-metal transition driven by exchange splitting. This transition is accompanied by an unusual, isotropic, and gigantic negative magnetoresistance, attributed to negligible magnetic anisotropy resulting from the weak spin-orbit coupling of half-filled Gd3+ 4f orbitals and light S atoms. In this work, we investigate Se substitution, which is expected to enhance spin-orbit coupling. Indeed, we observe slightly increased magnetic anisotropy in magnetotransport. Moreover, Se substitution suppresses the field-induced insulator-to-metal transition, likely due to an enlarged band gap that demands a higher exchange splitting to close. These findings provide deeper insights into the interplay between spin-orbit coupling, magnetic anisotropy, and transport behavior in GdPS, offering guidance for future materials design for desired functionalities. |
| title | Chalcogen Doping Effect on the Insulator-to-Metal Transition in GdPS |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.24762 |