Scaling laws of electron and hole spin relaxation in indirect band gap (In,Al)As/AlAs quantum dots
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arXiv
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| Autori principali: | , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866911547306016768 |
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| author | Shamirzaev, T. S. Yakovlev, D. R. Smirnov, D. S. Mantsevich, V. N. Bayer, M. |
| author_facet | Shamirzaev, T. S. Yakovlev, D. R. Smirnov, D. S. Mantsevich, V. N. Bayer, M. |
| contents | We investigate the electron and heavy hole spin dynamics as a function of magnetic field in ensembles of indirect band gap (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment. Employing a comprehensive model that accounts for both the exciton level quartet and the magnetic-field-driven redistribution of excitons between these states via spin relaxation processes, we extract the electron ($τ_{se}$) and heavy hole ($τ_{sh}$) spin relaxation times as a function of magnetic field for QDs of varying sizes. Our analysis reveals that both $τ_{se}(B)$ and $τ_{sh}(B)$ exhibit power-law scaling behavior, yet the scaling exponents for electrons and heavy holes show markedly different evolution with QD size. For QDs with a diameter of about 9 nm, we find $τ_{se}(B)\propto B^{-5}$ and $τ_{sh}(B)\propto B^{-3}$. Remarkably, increasing the QD diameter to about 16 nm results in a drastic change of the scaling laws, with both $τ_{se}(B)$ and $τ_{sh}(B)$ following a $\propto B^{-9}$ dependence. We discuss the underlying mechanisms responsible for this size-dependent transformation of the magnetic field scaling behavior of carrier spin relaxation. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_25830 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Scaling laws of electron and hole spin relaxation in indirect band gap (In,Al)As/AlAs quantum dots Shamirzaev, T. S. Yakovlev, D. R. Smirnov, D. S. Mantsevich, V. N. Bayer, M. Mesoscale and Nanoscale Physics We investigate the electron and heavy hole spin dynamics as a function of magnetic field in ensembles of indirect band gap (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment. Employing a comprehensive model that accounts for both the exciton level quartet and the magnetic-field-driven redistribution of excitons between these states via spin relaxation processes, we extract the electron ($τ_{se}$) and heavy hole ($τ_{sh}$) spin relaxation times as a function of magnetic field for QDs of varying sizes. Our analysis reveals that both $τ_{se}(B)$ and $τ_{sh}(B)$ exhibit power-law scaling behavior, yet the scaling exponents for electrons and heavy holes show markedly different evolution with QD size. For QDs with a diameter of about 9 nm, we find $τ_{se}(B)\propto B^{-5}$ and $τ_{sh}(B)\propto B^{-3}$. Remarkably, increasing the QD diameter to about 16 nm results in a drastic change of the scaling laws, with both $τ_{se}(B)$ and $τ_{sh}(B)$ following a $\propto B^{-9}$ dependence. We discuss the underlying mechanisms responsible for this size-dependent transformation of the magnetic field scaling behavior of carrier spin relaxation. |
| title | Scaling laws of electron and hole spin relaxation in indirect band gap (In,Al)As/AlAs quantum dots |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2603.25830 |