Modeling key characteristics of high-efficiency gallium arsenide solar cells
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arXiv
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| Autores principales: | , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866915893336866816 |
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| author | Sachenko, A. V. Kostylyov, V. P. Sokolovskyi, I. O. Shkrebtii, A. I. |
| author_facet | Sachenko, A. V. Kostylyov, V. P. Sokolovskyi, I. O. Shkrebtii, A. I. |
| contents | The paper proposes a theoretical approach to modeling the key characteristics of highly efficient gallium arsenide-based solar cells (SCs), using a one-dimensional SC model. The following recombination mechanisms are considered in the modeling: radiative recombination, interband Auger recombination, Shockley-Reed-Hall (SRH) recombination, surface recombination, recombination in the space charge region (SCR), and recombination along the perimeter of the structure. A simple empirical formula is proposed to describe the recombination along the perimeter of the SC structure. The GaAs band-gap narrowing effect is also taken into consideration. The main results are obtained under the assumption that the times of Shockley-Reed-Hall recombination and recombination in the SCR are the same. The effect of photon recycling (re-emission and re-absorption) is taken into account in a model similar to the one we used previously to simulate key characteristics of high-efficiency single-crystal silicon SCs. The model additionally uses absorption analysis at different doping levels of gallium arsenide. A good agreement was achieved between the experimental and theoretical dependencies. The results obtained in this work can be used to optimize the characteristics of highly efficient SCs based on direct-band semiconductors, particularly gallium arsenide (GaAs). Keywords: solar cell, high efficiency, modeling, gallium arsenide, recombination mechanisms, external quantum efficiency, parameter optimization. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_25921 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Modeling key characteristics of high-efficiency gallium arsenide solar cells Sachenko, A. V. Kostylyov, V. P. Sokolovskyi, I. O. Shkrebtii, A. I. Materials Science The paper proposes a theoretical approach to modeling the key characteristics of highly efficient gallium arsenide-based solar cells (SCs), using a one-dimensional SC model. The following recombination mechanisms are considered in the modeling: radiative recombination, interband Auger recombination, Shockley-Reed-Hall (SRH) recombination, surface recombination, recombination in the space charge region (SCR), and recombination along the perimeter of the structure. A simple empirical formula is proposed to describe the recombination along the perimeter of the SC structure. The GaAs band-gap narrowing effect is also taken into consideration. The main results are obtained under the assumption that the times of Shockley-Reed-Hall recombination and recombination in the SCR are the same. The effect of photon recycling (re-emission and re-absorption) is taken into account in a model similar to the one we used previously to simulate key characteristics of high-efficiency single-crystal silicon SCs. The model additionally uses absorption analysis at different doping levels of gallium arsenide. A good agreement was achieved between the experimental and theoretical dependencies. The results obtained in this work can be used to optimize the characteristics of highly efficient SCs based on direct-band semiconductors, particularly gallium arsenide (GaAs). Keywords: solar cell, high efficiency, modeling, gallium arsenide, recombination mechanisms, external quantum efficiency, parameter optimization. |
| title | Modeling key characteristics of high-efficiency gallium arsenide solar cells |
| topic | Materials Science |
| url | https://arxiv.org/abs/2603.25921 |