Electrostatic Effects of Self Trapped Holes in Gallium Oxide Devices
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arXiv
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| Format: | Preprint |
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2026
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| _version_ | 1866911549580378112 |
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| author | Wriedt, Nathan McGlone, Joe Orlandini, Davide Rajan, Siddharth |
| author_facet | Wriedt, Nathan McGlone, Joe Orlandini, Davide Rajan, Siddharth |
| contents | Gallium oxide is an ultra-wide bandgap semiconductor with exceptional properties for power electronics and UV-C optoelectronics, but its behavior under illumination remains poorly understood. In this work, we investigate how optically generated self-trapped holes influence electrostatics and current conduction in gallium oxide devices. Using a vertical Schottky photodiode with a semi-transparent Ni anode, we performed capacitance-voltage, current-voltage, and temperature-dependent I-V measurements under dark and above-bandgap illumination. Analysis of photocurrent gain reveals that conventional image-force barrier-lowering models require unrealistically high interfacial electric fields, suggesting the presence of an alternative mechanism. By applying Fowler-Nordheim tunneling theory, we reconcile measured photocurrents and photo-capacitance results with physically plausible fields and quantify the two-dimensional concentration of self-trapped holes. Our findings demonstrate that illumination-induced charge significantly alters device electrostatics. Understanding this tunneling-based photocurrent gain mechanism is critical for designing gallium oxide devices for UV-C detectors and power electronics. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2603_26958 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Electrostatic Effects of Self Trapped Holes in Gallium Oxide Devices Wriedt, Nathan McGlone, Joe Orlandini, Davide Rajan, Siddharth Materials Science Optics Gallium oxide is an ultra-wide bandgap semiconductor with exceptional properties for power electronics and UV-C optoelectronics, but its behavior under illumination remains poorly understood. In this work, we investigate how optically generated self-trapped holes influence electrostatics and current conduction in gallium oxide devices. Using a vertical Schottky photodiode with a semi-transparent Ni anode, we performed capacitance-voltage, current-voltage, and temperature-dependent I-V measurements under dark and above-bandgap illumination. Analysis of photocurrent gain reveals that conventional image-force barrier-lowering models require unrealistically high interfacial electric fields, suggesting the presence of an alternative mechanism. By applying Fowler-Nordheim tunneling theory, we reconcile measured photocurrents and photo-capacitance results with physically plausible fields and quantify the two-dimensional concentration of self-trapped holes. Our findings demonstrate that illumination-induced charge significantly alters device electrostatics. Understanding this tunneling-based photocurrent gain mechanism is critical for designing gallium oxide devices for UV-C detectors and power electronics. |
| title | Electrostatic Effects of Self Trapped Holes in Gallium Oxide Devices |
| topic | Materials Science Optics |
| url | https://arxiv.org/abs/2603.26958 |