Documenti analoghi

• Physics-based Full-band GaN High-Electron-Mobility Transistor Simulation Suggests Upper Bound of LO Phonon Lifetime
  di: Dastider, Ankan Ghosh, et al.
  Pubblicazione: (2025)
• Effect of Tensile Strain in GaN Layer on the Band Offsets and 2DEG Density in AlGaN/GaN Heterostructures
  di: Date, Mihir, et al.
  Pubblicazione: (2017)
• Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise
  di: Gabritchidze, Bekari, et al.
  Pubblicazione: (2022)
• Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects
  di: Raychaudhuri, Jagori, et al.
  Pubblicazione: (2023)
• Strain-tunable inter-valley scattering defines universal mobility enhancement in n- and p-type 2D TMDs
  di: Afrid, Sheikh Mohd Ta-Seen, et al.
  Pubblicazione: (2025)