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Hot LO Phonon-Induced RF Nonlinearity in GaN High-Electron-Mobility Transistors

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Dastider, Ankan Ghosh, Grupen, Matt, Miller, Nicholas C., Rakheja, Shaloo
Natura:	Preprint
Pubblicazione:	2026
Soggetti:	Applied Physics
Accesso online:	Acceder al recurso
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