Electrically and Magnetically Tunable Charge-Density-Wave Transport in Quasi-2D h-BN/1T-TaS2 Thin-Film Heterostructures
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| Main Authors: | , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866911551454183424 |
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| author | Brown, Jonas O. Taheri, Maedeh Sesing, Nicholas R. Salguero, Tina T. Balandin, Alexander A. |
| author_facet | Brown, Jonas O. Taheri, Maedeh Sesing, Nicholas R. Salguero, Tina T. Balandin, Alexander A. |
| contents | Controlling collective electronic phases in low-dimensional materials is a central challenge for developing technologies based on charge-density waves. Here, we report that perpendicular electric and magnetic fields can be used to tune charge-density-wave transport in the quasi-two-dimensional material 1T-TaS2. Using h-BN-encapsulated thin-film heterostructures with both top-gate and bottom-gate configurations, we find that electrical gating produces a non-monotonic shift in the depinning threshold, a behavior distinct from that of quasi-one-dimensional charge-density-wave systems. We further show that a perpendicular magnetic field increases the threshold voltage for domain depinning and can drive the nearly commensurate-to-incommensurate charge-density-wave phase transition, demonstrating magnetic control over a two-dimensional electron-lattice condensate. The obtained results shed light on mechanisms governing charge-density-wave domain dynamics and reveal combined electrical and magnetic-field control as a strategy for engineering low-power-dissipation devices and electronics for extreme environments. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_27731 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Electrically and Magnetically Tunable Charge-Density-Wave Transport in Quasi-2D h-BN/1T-TaS2 Thin-Film Heterostructures Brown, Jonas O. Taheri, Maedeh Sesing, Nicholas R. Salguero, Tina T. Balandin, Alexander A. Materials Science Mesoscale and Nanoscale Physics Controlling collective electronic phases in low-dimensional materials is a central challenge for developing technologies based on charge-density waves. Here, we report that perpendicular electric and magnetic fields can be used to tune charge-density-wave transport in the quasi-two-dimensional material 1T-TaS2. Using h-BN-encapsulated thin-film heterostructures with both top-gate and bottom-gate configurations, we find that electrical gating produces a non-monotonic shift in the depinning threshold, a behavior distinct from that of quasi-one-dimensional charge-density-wave systems. We further show that a perpendicular magnetic field increases the threshold voltage for domain depinning and can drive the nearly commensurate-to-incommensurate charge-density-wave phase transition, demonstrating magnetic control over a two-dimensional electron-lattice condensate. The obtained results shed light on mechanisms governing charge-density-wave domain dynamics and reveal combined electrical and magnetic-field control as a strategy for engineering low-power-dissipation devices and electronics for extreme environments. |
| title | Electrically and Magnetically Tunable Charge-Density-Wave Transport in Quasi-2D h-BN/1T-TaS2 Thin-Film Heterostructures |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2603.27731 |