Electrically and Magnetically Tunable Charge-Density-Wave Transport in Quasi-2D h-BN/1T-TaS2 Thin-Film Heterostructures

Fuente: arXiv
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Main Authors: Brown, Jonas O., Taheri, Maedeh, Sesing, Nicholas R., Salguero, Tina T., Balandin, Alexander A.
Format: Preprint
Published: 2026
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_version_ 1866911551454183424
author Brown, Jonas O.
Taheri, Maedeh
Sesing, Nicholas R.
Salguero, Tina T.
Balandin, Alexander A.
author_facet Brown, Jonas O.
Taheri, Maedeh
Sesing, Nicholas R.
Salguero, Tina T.
Balandin, Alexander A.
contents Controlling collective electronic phases in low-dimensional materials is a central challenge for developing technologies based on charge-density waves. Here, we report that perpendicular electric and magnetic fields can be used to tune charge-density-wave transport in the quasi-two-dimensional material 1T-TaS2. Using h-BN-encapsulated thin-film heterostructures with both top-gate and bottom-gate configurations, we find that electrical gating produces a non-monotonic shift in the depinning threshold, a behavior distinct from that of quasi-one-dimensional charge-density-wave systems. We further show that a perpendicular magnetic field increases the threshold voltage for domain depinning and can drive the nearly commensurate-to-incommensurate charge-density-wave phase transition, demonstrating magnetic control over a two-dimensional electron-lattice condensate. The obtained results shed light on mechanisms governing charge-density-wave domain dynamics and reveal combined electrical and magnetic-field control as a strategy for engineering low-power-dissipation devices and electronics for extreme environments.
format Preprint
id arxiv_https___arxiv_org_abs_2603_27731
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Electrically and Magnetically Tunable Charge-Density-Wave Transport in Quasi-2D h-BN/1T-TaS2 Thin-Film Heterostructures
Brown, Jonas O.
Taheri, Maedeh
Sesing, Nicholas R.
Salguero, Tina T.
Balandin, Alexander A.
Materials Science
Mesoscale and Nanoscale Physics
Controlling collective electronic phases in low-dimensional materials is a central challenge for developing technologies based on charge-density waves. Here, we report that perpendicular electric and magnetic fields can be used to tune charge-density-wave transport in the quasi-two-dimensional material 1T-TaS2. Using h-BN-encapsulated thin-film heterostructures with both top-gate and bottom-gate configurations, we find that electrical gating produces a non-monotonic shift in the depinning threshold, a behavior distinct from that of quasi-one-dimensional charge-density-wave systems. We further show that a perpendicular magnetic field increases the threshold voltage for domain depinning and can drive the nearly commensurate-to-incommensurate charge-density-wave phase transition, demonstrating magnetic control over a two-dimensional electron-lattice condensate. The obtained results shed light on mechanisms governing charge-density-wave domain dynamics and reveal combined electrical and magnetic-field control as a strategy for engineering low-power-dissipation devices and electronics for extreme environments.
title Electrically and Magnetically Tunable Charge-Density-Wave Transport in Quasi-2D h-BN/1T-TaS2 Thin-Film Heterostructures
topic Materials Science
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2603.27731