Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics
Fuente:
arXiv
Saved in:
| Main Authors: | , , , , , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1866911558123126784 |
|---|---|
| author | Avdienko, Pavel S. Hanschke, Lukas Buchinger, Quirin Bart, Nikolai Riedl, Hubert Scaparra, Bianca Xia, Yu Herdegen, Ziria Müller-Caspary, Knut Koblmüller, Gregor Huber-Loyola, Tobias Ludwig, Arne Pfenning, Andreas Höfling, Sven Müller, Kai Finley, Jonathan J. |
| author_facet | Avdienko, Pavel S. Hanschke, Lukas Buchinger, Quirin Bart, Nikolai Riedl, Hubert Scaparra, Bianca Xia, Yu Herdegen, Ziria Müller-Caspary, Knut Koblmüller, Gregor Huber-Loyola, Tobias Ludwig, Arne Pfenning, Andreas Höfling, Sven Müller, Kai Finley, Jonathan J. |
| contents | We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime and subsequent capping with an InGaA strain-reducing layer to redshift the emission wavelength. For different growth conditions, we investigate the optical properties of the dots using photoluminescence mapping and correlate with structural properties determined by scanning transmission electron microscopy. Using a surface roughness modulation technique and synchronizing InAs sub-monolayer deposition cycles with substrate rotation, we control the dot density and position low-density regions (< 1 QD per um^2) on the substrate. Hyperspectral imaging is used to map the spatial and spectral characteristics of many individual dots in the low-density region, confirming that our approach is universally applicable to conventional MBE growth on (001) surfaces. Finally, we tune the QD emission wavelength within the O-band using electric fields and demonstrate single-photon emission with g(2)(0) = 0.020(14). |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2603_29934 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics Avdienko, Pavel S. Hanschke, Lukas Buchinger, Quirin Bart, Nikolai Riedl, Hubert Scaparra, Bianca Xia, Yu Herdegen, Ziria Müller-Caspary, Knut Koblmüller, Gregor Huber-Loyola, Tobias Ludwig, Arne Pfenning, Andreas Höfling, Sven Müller, Kai Finley, Jonathan J. Materials Science Mesoscale and Nanoscale Physics Applied Physics We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime and subsequent capping with an InGaA strain-reducing layer to redshift the emission wavelength. For different growth conditions, we investigate the optical properties of the dots using photoluminescence mapping and correlate with structural properties determined by scanning transmission electron microscopy. Using a surface roughness modulation technique and synchronizing InAs sub-monolayer deposition cycles with substrate rotation, we control the dot density and position low-density regions (< 1 QD per um^2) on the substrate. Hyperspectral imaging is used to map the spatial and spectral characteristics of many individual dots in the low-density region, confirming that our approach is universally applicable to conventional MBE growth on (001) surfaces. Finally, we tune the QD emission wavelength within the O-band using electric fields and demonstrate single-photon emission with g(2)(0) = 0.020(14). |
| title | Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics |
| topic | Materials Science Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2603.29934 |