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| Main Authors: | , , |
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| Format: | Preprint |
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2026
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| Online Access: | https://arxiv.org/abs/2604.00233 |
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| _version_ | 1866917375911133184 |
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| author | Song, Harim Kim, Donghoi Kim, Chinkyo |
| author_facet | Song, Harim Kim, Donghoi Kim, Chinkyo |
| contents | GaN polarity inversion and the associated inversion domain boundaries (IDBs) are frequently observed during lateral overgrowth and are often discussed in terms of the small energetic spread among competing IDB structures predicted by first-principles calculations. In circular mask openings, \(\{11\bar{2}0\}\)-aligned IDBs have previously been explained by geometric closure of a single-polarity hexagonal domain at the circular boundary. Here we examine an experimentally distinct regime in which opposite-polarity domains already coexist within the opening before the later development of long, straight IDB traces. In this mixed-polarity regime, the final trace orientation cannot be attributed solely to the macroscopic circular boundary. Nevertheless, plan-view SEM line-trace statistics show that IDB orientations remain biased toward the \(\{11\bar{2}0\}\) family. To quantify how this bias develops during propagation, we perform distance-resolved, length-weighted orientation analysis in concentric annular regions defined from the opening center. The resulting metrics show that \(\{11\bar{2}0\}\)-biased alignment is progressively amplified with propagation distance, while the orientation distribution becomes narrower, indicating systematic sharpening of the preferred alignment state. We further apply the same ring-resolved statistical operators to minimal two-domain propagation simulations in a circular opening and find that a propagation-mediated anisotropy reproduces the observed radial amplification under fixed circular geometry. Together, these results establish a quantitative phenomenology of \(\{11\bar{2}0\}\)-biased IDB alignment in polarity-mixed GaN lateral overgrowth on patterned sapphire and indicate that, although mask-boundary-imposed selection may describe single-polarity closure cases, the present mixed-polarity regime is better explained by propagation-mediated amplification. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_00233 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Propagation-mediated amplification of \{11\={2}0\}-biased inversion domain boundary alignment in polarity-mixed GaN lateral overgrowth Song, Harim Kim, Donghoi Kim, Chinkyo Materials Science GaN polarity inversion and the associated inversion domain boundaries (IDBs) are frequently observed during lateral overgrowth and are often discussed in terms of the small energetic spread among competing IDB structures predicted by first-principles calculations. In circular mask openings, \(\{11\bar{2}0\}\)-aligned IDBs have previously been explained by geometric closure of a single-polarity hexagonal domain at the circular boundary. Here we examine an experimentally distinct regime in which opposite-polarity domains already coexist within the opening before the later development of long, straight IDB traces. In this mixed-polarity regime, the final trace orientation cannot be attributed solely to the macroscopic circular boundary. Nevertheless, plan-view SEM line-trace statistics show that IDB orientations remain biased toward the \(\{11\bar{2}0\}\) family. To quantify how this bias develops during propagation, we perform distance-resolved, length-weighted orientation analysis in concentric annular regions defined from the opening center. The resulting metrics show that \(\{11\bar{2}0\}\)-biased alignment is progressively amplified with propagation distance, while the orientation distribution becomes narrower, indicating systematic sharpening of the preferred alignment state. We further apply the same ring-resolved statistical operators to minimal two-domain propagation simulations in a circular opening and find that a propagation-mediated anisotropy reproduces the observed radial amplification under fixed circular geometry. Together, these results establish a quantitative phenomenology of \(\{11\bar{2}0\}\)-biased IDB alignment in polarity-mixed GaN lateral overgrowth on patterned sapphire and indicate that, although mask-boundary-imposed selection may describe single-polarity closure cases, the present mixed-polarity regime is better explained by propagation-mediated amplification. |
| title | Propagation-mediated amplification of \{11\={2}0\}-biased inversion domain boundary alignment in polarity-mixed GaN lateral overgrowth |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.00233 |