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Impact of gate voltage on switching field of perpendicular magnetic tunnel junctions with a synthetic antiferromagnetic free layer

Fuente: arXiv

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Bibliographic Details
Main Authors:	Fan, K., Beek, S. V., Talmelli, G., Kateel, V., Giuliano, D., Vermeulen, B., Cai, K., Sorée, B., Boeck, J. D., Carpenter, R., Rao, S., Couet, S., Nguyen, V. D., Kar, G. S.
Format:	Preprint
Published:	2026
Subjects:	Mesoscale and Nanoscale Physics
Online Access:	Acceder al recurso
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