Salvato in:
| Autori principali: | , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2026
|
| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2604.01942 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
| _version_ | 1866918425536757760 |
|---|---|
| author | Adhikari, Surajit Alam, Aftab Johari, Priya |
| author_facet | Adhikari, Surajit Alam, Aftab Johari, Priya |
| contents | Antiperovskite derivatives have recently emerged as promising lead-free alternatives to halide perovskites for optoelectronic applications. Here, using a comprehensive first-principles calculations including density functional perturbation theory and many-body perturbation theory (involving GW and Bethe-Salpeter equation (BSE)), we investigate the stability, excitonic, polaronic, and optoelectronic properties of cubic Ba$_3$MA$_3$ (M = P, As, Sb, Bi; A = Cl, Br, I). These compounds are found to be dynamically and thermodynamically stable direct-gap semiconductors with G$_0$W$_0$@PBE+SOC band gaps spanning 1.23-2.17 eV. BSE calculations reveal moderate exciton binding energies (0.254-0.352 eV) and intermediate-radius excitons, while Fröhlich polaron analysis indicates intermediate carrier-phonon coupling and mobilities up to $\sim$ 75 cm$^{2}$V$^{-1}$s$^{-1}$. The resulting spectroscopic limited maximum efficiencies reach $\sim$ 19-32%, surpassing several lead-based perovskites. Our results establish Ba-based antiperovskite derivatives as a robust, eco-friendly platform for next-generation optoelectronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_01942 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Lead-free antiperovskite derivatives Ba$_3$MA$_3$ (M = P, As, Sb, Bi; A = Cl, Br, I): Next-gen materials for optoelectronics Adhikari, Surajit Alam, Aftab Johari, Priya Materials Science Antiperovskite derivatives have recently emerged as promising lead-free alternatives to halide perovskites for optoelectronic applications. Here, using a comprehensive first-principles calculations including density functional perturbation theory and many-body perturbation theory (involving GW and Bethe-Salpeter equation (BSE)), we investigate the stability, excitonic, polaronic, and optoelectronic properties of cubic Ba$_3$MA$_3$ (M = P, As, Sb, Bi; A = Cl, Br, I). These compounds are found to be dynamically and thermodynamically stable direct-gap semiconductors with G$_0$W$_0$@PBE+SOC band gaps spanning 1.23-2.17 eV. BSE calculations reveal moderate exciton binding energies (0.254-0.352 eV) and intermediate-radius excitons, while Fröhlich polaron analysis indicates intermediate carrier-phonon coupling and mobilities up to $\sim$ 75 cm$^{2}$V$^{-1}$s$^{-1}$. The resulting spectroscopic limited maximum efficiencies reach $\sim$ 19-32%, surpassing several lead-based perovskites. Our results establish Ba-based antiperovskite derivatives as a robust, eco-friendly platform for next-generation optoelectronic devices. |
| title | Lead-free antiperovskite derivatives Ba$_3$MA$_3$ (M = P, As, Sb, Bi; A = Cl, Br, I): Next-gen materials for optoelectronics |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.01942 |