Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
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2026
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| author | Cao, Can Vangipuram, Vijay Gopal Thirupakuzi Mukit, Abdul Helli, Motahareh Hwang, Jinwoo Zhao, Hongping Lu, Wu |
| author_facet | Cao, Can Vangipuram, Vijay Gopal Thirupakuzi Mukit, Abdul Helli, Motahareh Hwang, Jinwoo Zhao, Hongping Lu, Wu |
| contents | We report on the design, fabrication, and characterization of all MOCVD-grown long-gate AlScN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on semi-insulating GaN substrates. Devices with a gate length of $1~μ$m and gate-drain spacing of $0.9~μ$ m exhibit a maximum drain current density of 1 A/mm, an on/off current ratio of $2\times 10^5$, and a three-terminal breakdown voltage of 63 V. The device has near-ideal subthreshold characteristics with a subthreshold swing of 63 mV/dec and a current dispersion as low as 7.8$\%$ at 10 V due to the excellent interfacial quality with a trap density ($D_\mathrm{it}$) of $2.11\times{10}^{11}~\mathrm{cm}^{-2}eV^{-1}$ and the semi-insulating GaN substrate with a low threading dislocation density. Small-signal RF measurements reveal an $f_\mathrm{T}/f_\mathrm{max}$ of 25.8/51.1 GHz, while large-signal load-pull characterization at 10 GHz demonstrates an output power density of 4.04 W/mm with a power-added efficiency of 22.7$\%$. In addition, a minimum noise figure below 2.5 dB was measured over a wide drain current range from 100 mA/mm to 700 mA/mm below 6 GHz. These results extend previous demonstrations of short-gate MOCVD-grown AlScN/GaN HEMTs to the long-gate, high-voltage regime, confirming the robustness of this material system for both high-frequency and high-power device applications with favorable microwave noise performance. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2604_03485 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates Cao, Can Vangipuram, Vijay Gopal Thirupakuzi Mukit, Abdul Helli, Motahareh Hwang, Jinwoo Zhao, Hongping Lu, Wu Applied Physics We report on the design, fabrication, and characterization of all MOCVD-grown long-gate AlScN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on semi-insulating GaN substrates. Devices with a gate length of $1~μ$m and gate-drain spacing of $0.9~μ$ m exhibit a maximum drain current density of 1 A/mm, an on/off current ratio of $2\times 10^5$, and a three-terminal breakdown voltage of 63 V. The device has near-ideal subthreshold characteristics with a subthreshold swing of 63 mV/dec and a current dispersion as low as 7.8$\%$ at 10 V due to the excellent interfacial quality with a trap density ($D_\mathrm{it}$) of $2.11\times{10}^{11}~\mathrm{cm}^{-2}eV^{-1}$ and the semi-insulating GaN substrate with a low threading dislocation density. Small-signal RF measurements reveal an $f_\mathrm{T}/f_\mathrm{max}$ of 25.8/51.1 GHz, while large-signal load-pull characterization at 10 GHz demonstrates an output power density of 4.04 W/mm with a power-added efficiency of 22.7$\%$. In addition, a minimum noise figure below 2.5 dB was measured over a wide drain current range from 100 mA/mm to 700 mA/mm below 6 GHz. These results extend previous demonstrations of short-gate MOCVD-grown AlScN/GaN HEMTs to the long-gate, high-voltage regime, confirming the robustness of this material system for both high-frequency and high-power device applications with favorable microwave noise performance. |
| title | Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2604.03485 |