Cover Image

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Fuente: arXiv

Saved in:

Bibliographic Details
Main Authors:	Cao, Can, Vangipuram, Vijay Gopal Thirupakuzi, Mukit, Abdul, Helli, Motahareh, Hwang, Jinwoo, Zhao, Hongping, Lu, Wu
Format:	Preprint
Published:	2026
Subjects:	Applied Physics
Online Access:	Acceder al recurso
Tags:	Add Tag No Tags, Be the first to tag this record!

Similar Items

Metalorganic Chemical Vapor Deposition of AlScN Thin Films and AlScN/AlN/GaN Heterostructures
by: Vangipuram, Vijay Gopal Thirupakuzi, et al.
Published: (2025)

Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire
by: Hu, Chenxi, et al.
Published: (2025)

Mist Chemical Vapor Deposition of Ultrawide Bandgap p‐LiGa 5 O 8 on AlN and Determination of the Band Offsets at the LiGa 5 O 8 /AlN Interface
by: Kaitian Zhang, et al.
Published: (2025)

Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide Band-Gap MgSiN2 Thin Films
by: Hu, Chenxi, et al.
Published: (2025)

Understanding Interfaces in AlScN/GaN Heterostructures
by: Isabel Streicher, et al.
Published: (2024)

Metal-organic chemical vapor deposition of MgSiN$_{2}$ thin films
by: Vangipuram, Vijay Gopal Thirupakuzi, et al.
Published: (2025)

High Mobility Multiple-Channel AlScN/GaN Heterostructures
by: Asteris, Aias, et al.
Published: (2025)

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures
by: Nguyen, Thai-Son, et al.
Published: (2024)

Influences of nitridation and thermal annealing on GaN buffer layers and the property of subsequent GaN epilayers grown by MOCVD
by: Dong Sing Wuu
Published: (1999)

Shubnikov-de Haas oscillations of two-dimensional electron gases in AlYN/GaN and AlScN/GaN heterostructures
by: Chen, Yu-Hsin, et al.
Published: (2026)

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates
by: Bhuiyan, A F M Anhar Uddin, et al.
Published: (2022)

Impact of Parasitic Conductive Interfaces on the DC and RF Performance of GaN‐on‐GaN HEMTs
by: Amer Bassal, et al.
Published: (2025)

Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate
by: Tomoharu Sugino, et al.
Published: (2024)

Schottky Contact Degradation and Dislocations in AlGaN‐GaN HEMTs
by: Yongkun Sin, et al.
Published: (2025)

Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
by: Zhou, Guangnan, et al.
Published: (2021)

Impacts of Backside Insulation on the Dynamic On-Resistance of Lateral p-GaN HEMTs-on-Si
by: Wang, Yu-Xuan, et al.
Published: (2024)

Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
by: Adamantia Logotheti, et al.
Published: (2024)

Advancing the Growth of GaN on AlScN and AlYN by Metal–Organic Chemical Vapor Deposition
by: Isabel Streicher, et al.
Published: (2025)

An improved small‐signal model for GaN HEMTs devices
by: Jing Bai, et al.
Published: (2024)

An Improved Nonlinear I‐V Model for GaN HEMTs
by: Qingyu Yuan, et al.
Published: (2024)

Vertical GaN Trench‐MOSFETs Fabricated on Ammonothermally Grown Bulk GaN Substrates
by: Maciej Kamiński, et al.
Published: (2024)

AlN/Si interface engineering to mitigate RF losses in MOCVD grown GaN-on-Si substrates
by: Cardinael, Pieter, et al.
Published: (2024)

Hybrid Classical-Quantum Neural Networks for Multi-Characteristic Co-Optimization of Recessed-Gate AlGaN/GaN MIS-HEMTs
by: Rai, Rushat, et al.
Published: (2026)

Two-Temperature Principle for Electrothermal Performance Evaluation of GaN HEMTs
by: Shen, Yang, et al.
Published: (2023)

Epitaxial high-K AlBN barrier GaN HEMTs
by: Savant, Chandrashekhar, et al.
Published: (2025)

Impact of AlN buffer thickness on electrical and thermal characteristics of AlGaN/GaN/AlN HEMTs
by: Kim, Minho, et al.
Published: (2025)

Diffusion of Acceptor Metal Impurities from Semi‐Insulating GaN into Undoped GaN Epitaxial Layers
by: Kenji Iso, et al.
Published: (2025)

Enhanced Performance of Ultraviolet AlGaN/GaN Photo‐HEMTs by Optimized Channel Isolation Schemes
by: Ramit Kumar Mondal, et al.
Published: (2024)

Electrical and Structural Properties of In-Situ MOCVD Grown Al$_2$O$_3$/$β$-Ga$_2$O$_3$ and Al$_2$O$_3$/$β$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ MOSCAPs
by: Bhuiyan, A F M Anhar Uddin, et al.
Published: (2025)

InGaN Nanopixel Arrays on Single Crystal GaN Substrate
by: Anand, Nirmal, et al.
Published: (2025)

Initial Growth of GaN and InN Over GaAs (110) Substrates
by: H. W. Alves Leite
Published: (2004)

Comparison of reverse current mechanisms in GaN Schottky diodes grown on sapphire versus ammonothermal GaN substrates
by: Orfao, B., et al.
Published: (2026)

Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications
by: Martinez, Rafael Perez, et al.
Published: (2024)

Ultraviolet Optoelectronic Synapse Based on AlScN/p‐i‐n GaN Heterojunction for Advanced Artificial Vision Systems
by: Zhiwei Xie, et al.
Published: (2025)

Microwave dependent quantum transport characteristics in GaN/AlGaN FETs
by: Shinozaki, Motoya, et al.
Published: (2024)

Mg-doping and free-hole properties of hot-wall MOCVD GaN
by: Papamichail, Alexis, et al.
Published: (2022)

GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices
by: Frank Brunner, et al.
Published: (2024)

Comparative Analysis of Ni/Ag and Ni/Au Contacts on GaN/AlGaN/GaN Platform
by: Yuanlei Zhang, et al.
Published: (2024)

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates
by: Matys, Maciej, et al.
Published: (2024)

Comprehensive TCAD Simulation Study of High Voltage (>650V) Common Drain Bidirectional AlGaN/GaN HEMTs
by: Alam, Md Tahmidul, et al.
Published: (2023)