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| Main Authors: | , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2604.03762 |
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Table of Contents:
- We theoretically investigate spin-dependent transport in a TMD-based vertical spin valve, taking WSe$_2$ as a representative example. Using effective Hamiltonians for the heterostructure and the Landauer formula, we derive the transmission and reflection coefficients within a transfer-matrix approach. The calculated magnetoresistance shows an oscillatory dependence on the WSe$_2$ thickness when the Fermi level is tuned near the valence-band maximum. The effects of gate voltage and exchange fields on the magnetoresistance are further analyzed. We also identify a Fabry-Pérot-like interference contribution to the magnetoresistance, which can enhance or even induce negative magnetoresistance in certain thickness regimes. Our results provide a qualitative understanding of the negative magnetoresistance observed in WSe$_2$-based spin valves and may offer useful insights for the design of tunable spintronic devices.