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| Autores principales: | , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| Materias: | |
| Acceso en línea: | https://arxiv.org/abs/2604.04318 |
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| _version_ | 1866913007118843904 |
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| author | Tang, Jingyu Tseng, Po-Sen Jiang, Kunyao Kurchin, Rachel C. Davis, Robert F. Porter, Lisa M. |
| author_facet | Tang, Jingyu Tseng, Po-Sen Jiang, Kunyao Kurchin, Rachel C. Davis, Robert F. Porter, Lisa M. |
| contents | The kinetics of the $κ$ to $β$-Ga$_2$O$_3$ phase transformation were investigated in five batches of nominally phase-pure $κ$-Ga2O3 thin films heteroepitaxially grown on c-plane sapphire, with film thickness ranging from 700 to 1100 nm, using in-situ high-temperature X-ray diffraction. Phase fractions were quantitatively extracted through modified Rietveld refinement that accounts for preferred orientation, and the transformation kinetics were analyzed using the Johnson-Mehl-Avrami-Kolmogorov (JMAK) model. The applicability of the JMAK model to thin-film materials was evaluated and its lower and upper bounds for thin films and bulk materials were established. Based on this analysis, a method specifically suited for thin-film kinetic studies was developed and yielded reproducible and robust results across all five sample batches. The results indicate that the $κ$ to $β$ phase transformation in ~700-1100 nm films is best described as an interface-controlled, site-saturated nucleation with thickness-limited or effectively two-dimensional growth. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_04318 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Kinetics studies on $κ$ to $β$-Ga$_2$O$_3$ phase transformations via in-situ high temperature X-ray diffraction Tang, Jingyu Tseng, Po-Sen Jiang, Kunyao Kurchin, Rachel C. Davis, Robert F. Porter, Lisa M. Materials Science The kinetics of the $κ$ to $β$-Ga$_2$O$_3$ phase transformation were investigated in five batches of nominally phase-pure $κ$-Ga2O3 thin films heteroepitaxially grown on c-plane sapphire, with film thickness ranging from 700 to 1100 nm, using in-situ high-temperature X-ray diffraction. Phase fractions were quantitatively extracted through modified Rietveld refinement that accounts for preferred orientation, and the transformation kinetics were analyzed using the Johnson-Mehl-Avrami-Kolmogorov (JMAK) model. The applicability of the JMAK model to thin-film materials was evaluated and its lower and upper bounds for thin films and bulk materials were established. Based on this analysis, a method specifically suited for thin-film kinetic studies was developed and yielded reproducible and robust results across all five sample batches. The results indicate that the $κ$ to $β$ phase transformation in ~700-1100 nm films is best described as an interface-controlled, site-saturated nucleation with thickness-limited or effectively two-dimensional growth. |
| title | Kinetics studies on $κ$ to $β$-Ga$_2$O$_3$ phase transformations via in-situ high temperature X-ray diffraction |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.04318 |