Ultrafast Non-Volatile Weyl LuminoMem for Mid-Infrared In-Memory Computing
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arXiv
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| Format: | Preprint |
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2026
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| _version_ | 1866910105584271360 |
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| author | Liang, Delang Wang, Shiyu Wang, Yan Li, Dong Chen, Yuchun Cheng, Bin Qin, Mingyang Yang, Dehong Sheng, Jie Li, Lin Zeng, Changgan Sun, Dong Pan, Anlian Liu, Jing |
| author_facet | Liang, Delang Wang, Shiyu Wang, Yan Li, Dong Chen, Yuchun Cheng, Bin Qin, Mingyang Yang, Dehong Sheng, Jie Li, Lin Zeng, Changgan Sun, Dong Pan, Anlian Liu, Jing |
| contents | Integrated optoelectronic systems strive to combine the logic/memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures rely on separate readout circuitry and modulators, creating bottlenecks in energy and latency, while existing direct transduction methods often compromise on switching speed or non-volatility. Here, we report an ultrafast, non-volatile optoelectronic memory, named LuminoMem, that integrates electrical storage and mid-infrared light emission in a single device. The device utilizes a floating-gate architecture, in which the Weyl semiconductor tellurium serves simultaneously as a charge-trapping storage layer and an emissive medium. This design enables nanosecond-scale electrical programming of non-volatile photoluminescence at 3.4 um, allowing direct optical access to stored states without external modulation. We demonstrate 4-bit (16-level) optical storage capacity and validate the device's performance through neural network simulations that achieve high accuracy on the Fashion-MNIST dataset. By effectively bridging the gap between electronic storage and mid-infrared photonics, the demonstrated mid-infrared LuminoMem provides a hardware foundation for promoting current computation efficiency and potential intelligent platforms that co-integrate computing, memory, and sensing capabilities. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_04388 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Ultrafast Non-Volatile Weyl LuminoMem for Mid-Infrared In-Memory Computing Liang, Delang Wang, Shiyu Wang, Yan Li, Dong Chen, Yuchun Cheng, Bin Qin, Mingyang Yang, Dehong Sheng, Jie Li, Lin Zeng, Changgan Sun, Dong Pan, Anlian Liu, Jing Materials Science Mesoscale and Nanoscale Physics Integrated optoelectronic systems strive to combine the logic/memory density of electronics with the bandwidth of photonics, but monolithic realization is impeded by the inefficient electronic-to-photonic interface. Current architectures rely on separate readout circuitry and modulators, creating bottlenecks in energy and latency, while existing direct transduction methods often compromise on switching speed or non-volatility. Here, we report an ultrafast, non-volatile optoelectronic memory, named LuminoMem, that integrates electrical storage and mid-infrared light emission in a single device. The device utilizes a floating-gate architecture, in which the Weyl semiconductor tellurium serves simultaneously as a charge-trapping storage layer and an emissive medium. This design enables nanosecond-scale electrical programming of non-volatile photoluminescence at 3.4 um, allowing direct optical access to stored states without external modulation. We demonstrate 4-bit (16-level) optical storage capacity and validate the device's performance through neural network simulations that achieve high accuracy on the Fashion-MNIST dataset. By effectively bridging the gap between electronic storage and mid-infrared photonics, the demonstrated mid-infrared LuminoMem provides a hardware foundation for promoting current computation efficiency and potential intelligent platforms that co-integrate computing, memory, and sensing capabilities. |
| title | Ultrafast Non-Volatile Weyl LuminoMem for Mid-Infrared In-Memory Computing |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2604.04388 |