Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics

Fuente: arXiv

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Bibliographic Details
Main Authors:	Gogova, D., Tran, D., Stanishev, V., Shafizadeh, D., Hsiao, C. -L., Kim, M., Pécz, B., Kovács, A., Frey, K., Sulyok, A., Singh, N. K., Febvrier, A. Le, Eklund, P., Darakchieva, V.
Format:	Preprint
Published:	2026
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2604.04508