Reduced Optical Gain Threshold by Carrier Multiplication in Semiconductor Perovskite Nanocrystals

Fuente: arXiv
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Main Authors: Zhang, Zhen, Sun, Encheng, Li, Jian, Zhang, Chunfeng, Hu, Fengrui, Xiao, Min, Wang, Xiaoyong
Format: Preprint
Published: 2026
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author Zhang, Zhen
Sun, Encheng
Li, Jian
Zhang, Chunfeng
Hu, Fengrui
Xiao, Min
Wang, Xiaoyong
author_facet Zhang, Zhen
Sun, Encheng
Li, Jian
Zhang, Chunfeng
Hu, Fengrui
Xiao, Min
Wang, Xiaoyong
contents Carrier multiplication (CM) describes a strong charge-carrier interaction process in semiconductor colloidal nanocrystals (NCs), wherein two band-edge excitons are simultaneously created by an absorbed photon with at least twice the bandgap energy (2 Eg). While being fundamentally intriguing, it has been exclusively utilized to enhance the light-to-electricity conversion efficiencies in the photodetector and solar-cell devices. In this report, we have synthesized the core/shell perovskite FAPbI3/NdF3 NCs with a biexciton recombination lifetime of ~3.9 ns, and demonstrated that a CM efficiency of ~25.7% can be achieved under the ~355 nm laser excitation (~2.21 Eg). This CM occurrence leads to a two-fold reduction in the optical gain threshold, as compared to that obtained under the ~640 nm laser excitation (~1.23 Eg). When combined with the single-exciton and zero-threshold optical gain schemes previously developed for semiconductor colloidal NCs, the CM effect introduced here would further mitigate the optical-pumping requirement for the routine operation of continuous-wave lasing.
format Preprint
id arxiv_https___arxiv_org_abs_2604_04628
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Reduced Optical Gain Threshold by Carrier Multiplication in Semiconductor Perovskite Nanocrystals
Zhang, Zhen
Sun, Encheng
Li, Jian
Zhang, Chunfeng
Hu, Fengrui
Xiao, Min
Wang, Xiaoyong
Optics
Mesoscale and Nanoscale Physics
Carrier multiplication (CM) describes a strong charge-carrier interaction process in semiconductor colloidal nanocrystals (NCs), wherein two band-edge excitons are simultaneously created by an absorbed photon with at least twice the bandgap energy (2 Eg). While being fundamentally intriguing, it has been exclusively utilized to enhance the light-to-electricity conversion efficiencies in the photodetector and solar-cell devices. In this report, we have synthesized the core/shell perovskite FAPbI3/NdF3 NCs with a biexciton recombination lifetime of ~3.9 ns, and demonstrated that a CM efficiency of ~25.7% can be achieved under the ~355 nm laser excitation (~2.21 Eg). This CM occurrence leads to a two-fold reduction in the optical gain threshold, as compared to that obtained under the ~640 nm laser excitation (~1.23 Eg). When combined with the single-exciton and zero-threshold optical gain schemes previously developed for semiconductor colloidal NCs, the CM effect introduced here would further mitigate the optical-pumping requirement for the routine operation of continuous-wave lasing.
title Reduced Optical Gain Threshold by Carrier Multiplication in Semiconductor Perovskite Nanocrystals
topic Optics
Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2604.04628